IXTQ50N25T

Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T VDSS ID25 = = 250V 50A Ω 60mΩ RDS(on) ≤ N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 250 250 V V VGSM Transient ± 30 V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 130 A A IA EAS TC = 25°C TC = 25°C 5 1.5 A J PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 s 300 260 °C °C Md FC Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Mounting Force (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G Characteristic Values Min. Typ . Max. VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 20V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 1 TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features z Avalanche Rated High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) z Advantages z z High Power Density Easy to Mount Space Savings Applications BVDSS V 5.0 S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D V μA 150 μA 60 mΩ z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z DS99346B(01/10) IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ . Max. gfs 35 VDS= 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 Qgd 58 S 4000 pF 410 pF 60 pF 14 ns 25 ns 47 ns 25 ns 78 nC 19 nC 22 nC RthJC RthCH 0.31 (TO-220) (TO-3P & TO-247) °C/W °C/W °C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ . Max. 50 A Repetitive, Pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 250A/μs IRM QRM Note: VR = 100V, VGS = 0V 166 ns 23 A 1.9 μC 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T TO-263 (IXTA) Outline TO-220 (IXTP) Outline Terminals: 1 - Gate 2 - Drain 3 - Source Pins: 1 - Gate 3 - Source 2 - Drain TO-247 (IXTH) Outline Dim. 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source 2 - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline Terminals: 1 - Gate 3 - Source © 2010 IXYS CORPORATION, All Rights Reserved 2 - Drain IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 50 160 VGS = 10V 7V 45 VGS = 10V 8V 140 40 120 ID - Amperes ID - Amperes 35 6V 30 25 20 7V 100 80 60 6V 15 40 10 5V 20 5 0 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 4 8 12 16 20 24 28 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 3.2 VGS = 10V 7V 45 VGS = 10V 2.8 ID - Amperes 35 R DS(on) - Normalized 40 6V 30 25 20 5V 15 2.4 2 I D = 50A I D = 25A 1.6 1.2 10 0.8 5 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 55 4.0 50 VGS = 10V 3.5 TJ = 125ºC 45 40 3.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.5 2.0 1.5 TJ = 25ºC 35 30 25 20 15 10 1.0 5 0.5 0 0 20 40 60 80 100 120 140 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 8. Transconductance 100 90 90 80 80 70 70 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 100 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 TJ = - 40ºC 25ºC 60 50 125ºC 40 30 20 20 10 10 0 0 3.6 4.0 4.4 4.8 5.2 5.6 6.0 0 6.4 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 Fig. 10. Gate Charge 180 10 160 9 VDS = 125V I D = 25A 8 140 I G = 10mA 7 120 VGS - Volts IS - Amperes 50 ID - Amperes 100 80 60 TJ = 125ºC 6 5 4 3 TJ = 25ºC 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 VSD - Volts 20 30 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1.00 10,000 Capacitance - PicoFarads f = 1 MHz Ciss Z(th)JC - ºC / W 1,000 Coss 100 0.10 Crss 10 0 5 10 15 20 25 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 30 35 40 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 26 26 RG = 3.3Ω , VGS = 15V VDS = 125V 24 23 I 22 21 I D D TJ = 25ºC 25 t r - Nanoseconds t r - Nanoseconds 25 = 25A 24 RG = 3.3Ω , VGS = 15V VDS = 125V 23 22 = 50A TJ = 125ºC 21 20 19 20 25 35 45 55 65 75 85 95 105 115 125 15 20 25 30 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance I D = 25A, 50A 26 19 22 17 18 15 14 t f - Nanoseconds 21 8 10 12 14 16 18 26 RG = 3.3Ω, VGS = 15V 58 25 VDS = 125V 56 24 52 22 48 20 46 19 44 25 20 35 45 66 54 22 50 TJ = 25ºC 46 t f - Nanoseconds t f - Nanoseconds 58 TJ = 125ºC 24 42 TJ = 125ºC 16 38 25 30 85 95 105 115 42 125 35 40 45 50 ID - Amperes 220 90 tf 80 TJ = 125ºC, VGS = 15V 200 td(off) - - - - 180 VDS = 125V I D = 25A, 50A 70 160 60 140 50 120 40 100 30 80 20 60 10 t d ( o f f ) - Nanoseconds TJ = 25ºC t d ( o f f ) - Nanoseconds VDS = 125V 26 20 75 100 62 RG = 3.3Ω, VGS = 15V 15 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - 18 55 TJ - Degrees Centigrade 30 20 50 I D = 50A 21 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 28 54 I D = 25A 23 RG - Ohms tf 60 td(off) - - - - 18 13 6 tf t d ( o f f ) - Nanoseconds 30 t d ( o n ) - Nanoseconds t r - Nanoseconds 23 VDS = 125V 4 50 62 27 td(on) - - - - TJ = 125ºC, VGS = 15V 2 45 28 25 tr 40 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 38 34 35 ID - Amperes 40 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_50N25T(5G)01-26-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.