IXTQ52N30P

PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS(on) = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C 52 A IDM TC = 25C, Pulse Width Limited by TJM 150 A IA TC = 25C 52 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 400 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-3P) Weight TO-286 TO-3P 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 g g TO-3P (IXTQ) G D G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V     RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   High Power Density Easy to Mount Space Savings Applications  V 5.0 V           100 nA    TJ = 125C D (Tab) Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) S  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 25 A 250 A 73 m DS99115F(9/13) IXTT52N30P IXTQ52N30P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss 30 S 3490 pF 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC 0.25 0.31 C/W C/W VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS TO-3P TO-268 Outline 1 - GATE 2,4 - DRAIN 3 - SOURCE Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 52 A Repetitive, Pulse Width Limited by TJM 150 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/s 250 ns QRM VR = 100V, VGS = 0V 3.0 μC Note TO-3P Outline 1. Pulse test, t  300s, duty cycle, d  2%. 1 - GATE 2,4 - DRAIN 3 - SOURCE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT52N30P IXTQ52N30P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC VGS = 10V 8V 50 VGS = 10V 9V 140 7V 120 40 8V I D - Amperes I D - Amperes 100 30 6V 20 80 7V 60 40 6V 10 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 3.0 VGS = 10V 8V 7V 25 30 VGS = 10V 2.6 RDS(on) - Normalized 40 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 50 15 VDS - Volts VDS - Volts 6V 30 20 I D = 52A 2.2 I D = 26A 1.8 1.4 1.0 10 5V 0.6 0 0.2 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 4.0 VGS = 10V 50 40 TJ = 125ºC 3.0 I D - Amperes RDS(on) - Normalized 3.5 2.5 2.0 30 20 TJ = 25ºC 1.5 10 1.0 0.5 0 0 20 40 60 80 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT52N30P IXTQ52N30P Fig. 7. Input Admittance Fig. 8. Transconductance 60 100 90 TJ = - 40ºC 50 80 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC 40 125ºC 30 20 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 160 10 VDS = 150V 9 140 I D = 26A 8 I G = 10mA 120 VGS - Volts I S - Amperes 7 100 80 60 TJ = 125ºC 5 4 3 TJ = 25ºC 40 6 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit Ciss 100 I D - Amperes Capacitance - PicoFarads 40 1,000 C oss 25µs 100µs 10 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 100 10ms DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTT52N30P IXTQ52N30P Fig. 13. Maximum Transient Thermal Impedance 10 1 Fig. 13. Maximum Transient Thermal Impedance aaaaaa Z (th )JC - ºC / W 0.5 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Second © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_52N30P(6S) 9-26-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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