IXTQ64N25P

PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS(on) 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 64 A IDM TC = 25° C, pulse width limited by TJM 160 A IAR TC = 25° C 60 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TO-3P (IXTQ) Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-268 D (TO-3P) 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TO-268 (IXTT) G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l l 1.13/10 Nm/lb.in. l 5.5 5.0 (TAB) S G TC = 25° C TL TSOLD G g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. l BVDSS VGS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved l TJ = 125° C V 5.0 V ±100 nA 25 250 µA µA 49 mΩ l Easy to mount Space savings High power density DS99120E(12/05) IXTQ 64N25P IXTT 64N25P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 Ciss Coss 30 S 3450 pF 640 pF 155 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 23 ns td(off) RG = 4 Ω (External) 60 ns 20 ns 105 nC 24 nC 53 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31° C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 64 A ISM Repetitive 160 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 200 3.0 TO-268 (IXTT) Outline ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 64N25P IXTT 64N25P Fig. 1. Output Characte ris tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 64 180 V GS = 10V 56 9V 140 40 I D - Amperes I D - Amperes 48 V GS = 10V 160 9V 8V 7V 32 24 120 100 8V 80 7V 60 6V 16 40 8 6V 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 Fig. 3. Output Characte ris tics @ 125ºC 12 14 16 18 20 2.8 V GS = 10V 56 R D S ( o n ) - Normalized 7V 40 32 6V 24 V GS = 10V 2.5 9V 8V 48 I D - Amperes 10 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 64 16 5V 8 2.2 1.9 I D = 64A 1.6 I D = 32A 1.3 1 0.7 0 0.4 0 1 2 3 4 5 6 7 8 -50 V D S - V olts 0.5 ID25 V alue vs . ID 3.7 3.4 0 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 70 V GS = 10V 60 TJ = 125ºC 3.1 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 50 2.8 I D - Amperes R D S ( o n ) - Normalized 8 V D S - V olts V D S - V olts 2.5 2.2 1.9 1.6 40 30 20 TJ = 25ºC 1.3 10 1 0 0.7 0 30 60 90 120 I D - A mperes © 2006 IXYS All rights reserved 150 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 64N25P IXTT 64N25P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 60 120 105 50 TJ = -40ºC 25ºC 125ºC 40 - Siemens 75 30 fs 60 45 TJ = 125ºC 30 20 g I D - Amperes 90 25ºC -40ºC 15 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 0 8 15 30 45 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 75 90 105 120 135 Fig. 10. Gate Char ge 10 180 9 150 120 V G S - Volts I S - Amperes 60 I D - A mperes 90 60 TJ = 125ºC V DS = 125V 8 I D = 32A 7 I G = 10m A 6 5 4 3 30 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - V olts 1.2 1.4 0 10 20 30 Q 40 G 50 60 70 90 100 110 Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 1000 10000 f = 1MH z TJ = 150ºC C iss 1000 TC = 25ºC R DS(on) Lim it I D - Amperes Capacitance - picoFarads 80 - nanoCoulombs C oss 100 25µs 1m s 100µs 10m s 10 DC C rs s 100 1 0 5 10 15 20 25 V D S - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTQ 64N25P IXTT 64N25P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.