IXTQ74N20P

IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A ≤ 34 mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25° C 74 A IDM TC = 25° C, pulse width limited by TJM 200 A IAR TC = 25° C 60 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TO-3P (IXTQ) Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-268 (TO-3P) 480 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 5.5 5.0 g g G = Gate S = Source VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C 5.0 l l Advantages V l nA 25 250 µA µA 34 mΩ D (TAB) D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V ±100 S Features Characteristic Values Min. Typ. Max. BVDSS (TAB) S TO-268 (IXTT) l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D G TC = 25° C TL TSOLD G l l Easy to mount Space savings High power density DS99119E(12/05) IXTQ 74N20P IXTT 74N20P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss 44 S 3300 pF 800 pF 190 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 23 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 21 ns td(off) RG = 4 Ω (External) 60 ns 21 ns 107 nC 24 nC 52 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31° C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 74 A ISM Repetitive 180 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 160 3.0 TO-268 Outline ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 74N20P IXTT 74N20P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 200 80 VGS = 10V 70 9V 160 140 50 I D - Amperes I D - Amperes 60 VGS = 10V 180 9V 8V 7V 40 30 6V 20 8V 120 7V 100 80 60 6V 40 10 5V 20 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 6 Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 3 VGS = 10V 70 VGS = 10V 9V 8V 2.6 R D S ( o n ) - Normalized 60 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 80 7V 50 40 6V 30 20 2.2 I D = 74A 1.8 I D = 37A 1.4 1 5V 10 0 0.6 0 1 2 3 4 5 6 -50 7 -25 0 V D S - Volts 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 80 4.5 70 4 60 TJ = 175ºC 3.5 3 VGS = 10V 2.5 2 VGS = 15V 1.5 I D - Amperes R D S ( o n ) - Normalized 8 V D S - Volts V D S - Volts 50 40 30 20 1 TJ = 25ºC 10 0 0.5 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ 74N20P IXTT 74N20P Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 100 90 50 80 60 50 40 30 TJ = 150ºC 20 25ºC -40ºC TJ = -40ºC 40 g f s - Siemens I D - Amperes 70 25ºC 150ºC 30 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 160 140 VG S - Volts I S - Amperes 100 120 Fig. 10. Gate Charge 180 120 100 80 9 VDS = 100V 8 I D = 37A 7 I G = 10mA 6 5 4 3 TJ = 150ºC 40 2 TJ = 25ºC 1 20 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 0 1.4 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 175ºC C iss R DS(on) Limit I D - Amperes Capacitance - picoFarads 80 10 200 60 60 I D - Amperes C oss 1000 TC = 25ºC 100 25µs 100µs 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTQ 74N20P IXTT 74N20P Fig. 13. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.