Preliminary Technical Information
TrenchHVTM
Power MOSFET
IXTH96N25T
IXTQ96N25T
IXTV96N25T
VDSS
ID25
= 250V
= 96A
Ω
≤ 29mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
250
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
250
V
VGSM
Transient
± 30
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
96
75
250
A
A
A
IAS
EAS
TC = 25°C
TC = 25°C
5
2
A
J
PD
TC = 25°C
625
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
G
V
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Md
Mounting torque (TO-247 & TO-3P)
1.13 / 10
Nm/lb.in.
FC
Mounting force (PLUS220)
11..65 / 2.5..14.6
N/lb.
Weight
TO-247
TO-3P
PLUS220
6.0
5.5
4.0
g
g
g
D
(TAB)
S
TO-3P (IXTQ)
G
(TAB)
D
S
PLUS220 (IXTV)
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
International standard packages
Avalanche rated
z
Low package inductance
- easy to drive and to protect
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
Characteristic Values
Min.
Typ.
Max.
250
3
V
5
Advantages
Easy to mount
z
Space savings
z
High power density
z
V
± 200 nA
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
5 μA
250 μA
29 mΩ
Applications
z
z
z
z
z
z
© 2007 IXYS CORPORATION, All rights reserved
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
DS99863(09/07)
IXTH96N25T IXTQ96N25T
IXTV96N25T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Typ.
50
82
S
6100
pF
625
pF
75
pF
20
ns
22
ns
59
ns
28
ns
114
nC
33
nC
34
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.5Ω (External)
Qg(on)
Qgs
TO-247AD Outline
Min.
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
RthJC
Max.
0.20 °C/W
RthCS
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max.
96
A
Repetitive, pulse width limited by TJM
300
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IRM
QRM
IF = 48A, -di/dt = 250 A/μs
VR = 100 V,VGS = 0V
158
23
1.8
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
ns
A
μC
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5 mm or less from the package body.
PLUS220 (IXTV) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTH96N25T IXTQ96N25T
IXTV96N25T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
200
VGS = 10V
8V
7V
90
80
160
70
7V
140
ID - Amperes
ID - Amperes
VGS = 10V
8V
180
60
6V
50
40
120
100
80
30
60
20
40
10
6V
20
5V
5V
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
3.2
2
4
6
8
10
12
14
16
18
20
22
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to ID = 48A Value
vs. Junction Temperature
100
24
3.2
VGS = 10V
8V
7V
90
VGS = 10V
2.8
RDS(on) - Normalized
80
ID - Amperes
70
6V
60
50
40
30
5V
2.4
I D = 96A
2.0
I D = 48A
1.6
1.2
20
0.8
10
0.4
0
0
1
2
3
4
5
6
7
-50
8
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 48A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
90
3.4
VGS = 10V
External-Lead Current Limit
80
3.0
TJ = 125ºC
60
ID - Amperes
RDS(on) - Normalized
70
2.6
2.2
1.8
50
40
30
1.4
20
TJ = 25ºC
1.0
10
0.6
0
0
20
40
60
80
100
120
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
140
160
180
200
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTH96N25T IXTQ96N25T
IXTV96N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
140
130
TJ = - 40ºC
120
120
110
100
TJ = 125ºC
25ºC
- 40ºC
80
90
g f s - Siemens
ID - Amperes
100
60
25ºC
80
70
60
125ºC
50
40
40
30
20
20
10
0
0
3.4
3.8
4.2
4.6
5
5.4
5.8
6.2
0
6.6
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
120
140
160
Fig. 10. Gate Charge
200
10
180
9
160
8
140
7
VDS = 125V
I D = 25A
VGS - Volts
IS - Amperes
80
ID - Amperes
120
100
80
TJ = 125ºC
I G = 10mA
6
5
4
3
60
TJ = 25ºC
40
2
1
20
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10
20
30
VSD - Volts
40
50
60
70
80
90
100
110
120
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
Coss
100
0.10
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTH96N25T IXTQ96N25T
IXTV96N25T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
24
24
RG = 2.5Ω
22
22
VGS = 15V
TJ = 25ºC
20
I
18
I
16
D
D
t r - Nanoseconds
t r - Nanoseconds
VDS = 125V
= 96A
= 48A
20
RG = 2.5Ω
18
16
14
14
12
12
10
VGS = 15V
VDS = 125V
TJ = 125ºC
10
25
35
45
55
65
75
85
95
105
115
125
45
50
55
60
65
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
26
I D = 48A, 96A
24
18
23
16
22
14
21
12
20
10
3
4
5
6
7
8
9
tf
30
RG = 2.5Ω, VGS = 15V
66
64
I D = 48A
24
60
20
18
56
16
54
25
35
VGS = 15V
58
20
TJ = 25ºC
56
18
TJ = 125ºC
54
16
75
85
95
105
115
52
125
80
85
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
90
95
52
100
td(off) - - - -
tf
60
60
70
75
160
66
64
22
65
65
140
TJ = 125ºC, VGS = 15V
VDS = 125V
50
120
40
100
I D = 48A, 96A
30
80
20
60
10
t d ( o f f ) - Nanoseconds
VDS = 125V
TJ = 125ºC
60
55
70
t f - Nanoseconds
RG = 2.5Ω,
62
55
45
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
26
50
58
I D = 96A
14
68
45
62
22
TJ - Degrees Centigrade
tf
24
68
26
10
32
28
100
70
28
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
TJ = 25ºC
td(off) - - - -
32
RG - Ohms
30
95
VDS = 125V
19
2
90
t d ( o f f ) - Nanoseconds
VDS = 125V
20
85
72
25
t f - Nanoseconds
TJ = 125ºC, VGS = 15V
80
34
t d ( o n ) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
tr
75
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
24
22
70
ID - Amperes
40
2
3
4
5
6
7
8
9
10
RG - Ohms
IXYS REF: T_96N25T (7W) 08-10-07
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.