IXTR140P10T

IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = = ≤ -100V - 110A Ω 11mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 110 A IDM TC = 25°C, Pulse Width Limited by TJM - 400 A IA TC = 25°C -140 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 270 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G G = Gate S = Source Advantages z -100 - 2.0 V VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 10 μA -150 μA RDS(on) VGS = -10V, ID = - 70A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved - 4.0 Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. TJ = 125°C = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z VGS = 0V, ID = - 250μA D Features z BVDSS Isolated Tab S z Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D V z z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 11 mΩ DS100376B(01/13) IXTR140P10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 70A, Note 1 70 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 115 S 32.8 nF 2290 pF 700 pF 58 ns 26 ns 86 ns 26 ns 400 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = - 70A RG = 1Ω (External) Qg(on) Qgs ISOPLUS247 (IXTR) Outline VGS = -10V, VDS = 0.5 • VDSS, ID = - 70A Qgd 125 nC 100 nC 1 = Gate 2,4 = Drain 3 = Source 0.46 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V -140 A ISM Repetitive, Pulse Width Limited by TJM - 560 A VSD IF = -100A, VGS = 0V, Note 1 -1.4 V trr QRM IRM IF = - 70A, -di/dt = -100A/μs VR = -100V, VGS = 0V Note 130 650 -10 ns nC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR140P10T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -140 -900 VGS = -10V - 8V - 7V -120 VGS = -10V - 9V -800 - 8V -700 - 6V ID - Amperes ID - Amperes -100 -80 -60 - 7V -600 -500 -400 - 6V -300 -40 - 5V -200 -20 -100 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -10 -20 -30 -40 -50 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 70A Value vs. Junction Temperature 2.2 -140 VGS = -10V - 8V - 7V -120 VGS = -10V 2.0 1.8 R DS(on) - Normalized - 6V -100 ID - Amperes - 5V -80 -60 - 5V -40 1.6 I D = - 140A 1.4 I D = - 70A 1.2 1.0 0.8 -20 0.6 - 4V 0 0.4 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 70A Value vs. Drain Current 2.0 Fig. 6. Maximum Drain Current vs. Case Temperature -120 VGS = -10V -100 TJ = 125ºC 1.6 ID - Amperes R DS(on) - Normalized 1.8 1.4 1.2 -80 -60 -40 TJ = 25ºC 1.0 -20 0.8 0 0 -50 -100 -150 -200 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -250 -300 -350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR140P10T Fig. 8. Transconductance 200 -180 180 -160 160 -140 140 g f s - Siemens ID - Amperes Fig. 7. Input Admittance -200 -120 -100 TJ = 125ºC 25ºC - 40ºC -80 -60 TJ = - 40ºC 25ºC 120 125ºC 100 80 60 -40 40 -20 20 0 0 -3.4 -3.8 -4.2 -4.6 -5 -5.4 -5.8 -6.2 0 -20 -40 -60 -80 VGS - Volts -100 -120 -140 -160 -180 -200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -350 -10 VDS = - 50V -9 -300 I D = - 70A -8 -250 I G = -1mA VGS - Volts IS - Amperes -7 -200 -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 0 50 VSD - Volts 100 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 - 1,000 25µs 100µs - 100 10,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 1ms - 10 1,000 10ms TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 100ms DC -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTR140P10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 50 50 RG = 1Ω, VGS = -10V RG = 1Ω, VGS = -10V VDS = - 50V VDS = - 50V 40 I t r - Nanoseconds t r - Nanoseconds 40 = -140A D 30 I D = - 70A 20 TJ = 125ºC 30 TJ = 25ºC 20 10 10 25 35 45 55 65 75 85 95 105 115 125 -50 -60 -70 -80 -90 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 320 tr td(on) - - - - tf 200 120 160 I D = -140A 100 120 I D = - 70A 80 120 VDS = - 50V I D = - 70A 30 100 I D = - 140A 25 80 I D = - 70A 20 t d(off) - Nanoseconds 140 t f - Nanoseconds 240 60 60 40 40 0 1 2 3 4 5 6 7 8 9 15 10 25 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - 120 TJ = 125ºC 26 TJ = 25ºC 24 80 60 22 -80 -90 -100 -110 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -120 -130 40 -140 td(off) - - - - 320 280 VDS = - 50V I D = - 70A 120 240 100 200 80 160 I D = -140A 60 120 40 80 20 40 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 100 -70 tf TJ = 125ºC, VGS = -10V 140 t d(off) - Nanoseconds 28 -60 360 160 VDS = - 50V 40 125 180 t f - Nanoseconds tf RG = 1Ω, VGS = -10V -50 45 TJ - Degrees Centigrade 140 30 35 RG - Ohms 32 t f - Nanoseconds -140 td(off) - - - - RG = 1Ω, VGS = -10V 35 VDS = - 50V t d(on) - Nanoseconds t r - Nanoseconds -130 140 280 80 -120 40 TJ = 125ºC, VGS = -10V 160 -110 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 200 180 -100 ID - Amperes IXTR140P10T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_140P10T(A8-P10) 1-09-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.