IXTT100N25P

IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS(on) ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 100 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 250 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-264 TO-268 TO-264 (IXTK) G g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V ±100 nA 25 250 µA µA 27 mΩ (TAB) S G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l l V 5.0 D TO-268 (IXTT) l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D (TAB) S TO-3P (IXTQ) 1.13/10 Nm/lb.in. 5.5 10 5.0 D International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99118E(12/05) IXTK 100N25P IXTQ 100N25P IXTT 100N25P TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss S 6300 pF 1150 pF Crss 240 pF td(on) 25 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 56 tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 Ω (External) 26 ns 100 ns 28 ns 185 nC 43 nC 91 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.21° C/W RthCS TO-3P 0.21 ° C/W RthCS TO-264 0.15 ° C/W Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 200 3.0 TO-264 (IXTK) Outline ns µC TO-268 (IXTT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 2. Exte nde d Output Char acte ris tics @ 25ºC Fig. 1. Output Char acte r is tics @ 25ºC 250 100 V GS = 10V 9V 8V 90 80 9V 200 175 ID - Amperes 70 ID - Amperes V GS = 10V 225 60 50 7V 40 30 6V 20 8V 150 125 100 7V 75 50 10 6V 25 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 Fig. 3. Output Characte r is tics @ 125ºC 14 16 18 20 2.8 V GS = 10V 9V 8V 80 V GS = 10V 2.6 2.4 RDS(on) - Normalized 90 70 ID - Amperes 12 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e 100 7V 60 50 40 30 6V 20 2.2 2 1.8 I D = 100A 1.6 1.4 I D = 50A 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 V DS - V olts 5 6 -50 7 -25 50 75 100 125 150 90 V GS = 10V 3.1 25 Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r ature 0.5 ID25 V alue vs . ID 3.4 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 80 External Lead C urrent Lim it 70 2.5 TJ = 125ºC 2.2 1.9 1.6 1.3 ID - Amperes 2.8 RDS(on) - Normalized 10 V DS - V olts V DS - V olts 60 50 40 30 20 TJ = 25ºC 1 0.7 10 0 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 90 150 80 125 TJ = -40ºC 25ºC 125ºC 100 75 50 TJ = 125ºC 25ºC -40ºC 25 60 gfs - Siemens ID - Amperes 70 50 40 30 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 25 50 75 V GS - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Drain V oltage 125 150 175 200 Fig. 10. Gate Charge 10 300 V DS = 125V 9 250 I D = 50A 8 I G = 10m A 7 200 V G S - Volts IS - Amperes 100 ID - A mperes 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 V SD - V olts 0 1.4 20 40 60 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Are a Fig. 11. Capacitance 1000 10000 TJ = 150ºC TC = 25ºC C is s ID - Amperes Capacitance - picoFarads R DS (on) Lim it 1000 C os s 100µs 100 25µs 1m s 10m s DC 10 f = 1MH z C rs s 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - V olts 1000 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R(th)JC - ºC/W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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