IXTT10N100D2

Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) N-Channel = >  1000V 10A 1.5  D TO-247 (IXTH) G S G Symbol Test Conditions VDSX TJ = 25C to 150C 1000 V VDGX TJ = 25C to 150C, RGS = 1M 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 695 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g D D (Tab) S Maximum Ratings TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 VGS(off) VDS = 25V, ID = 1mA IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 5A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 2.5 V 100 nA 10 A 250 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 1.5 10 G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages V - 4.5 TO-268 (IXTT)  A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100326A(4/17) IXTH10N100D2 IXTT10N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 VDS = 30V, ID = 5A, Note 1 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 17 S 5320 pF 300 pF 70 pF 33 ns 36 ns 33 ns 164 ns 200 nC 19 nC 98 nC 0.21 0.18 C/W C/W Crss td(on) tr td(off) tf Resistive Switching Times VGS = + 5V, VDS = 500V, ID = 5A RG = 3.3 (External) Qg(on) Qgs VGS = + 5V, VDS = 500V, ID = 5A Qgd RthJC RthCS TO-247 TO-247 Outline Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 800V, ID = 0.22A, TC = 75C, tp = 5s 176 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 10A, VGS = -10V, Note 1 trr IRM QRM IF = 5A, -di/dt = 100A/s VR = 100V, VGS = -10V W Characteristic Values Min. Typ. Max. 0.8 1.2 23 13.8 1.3 V 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline μs A μC Note 1. Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 3 - Source 2,4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH10N100D2 IXTT10N100D2 o o Fig. 1. Output Characteristics @ TJ = 25 C 10 Fig. 2. Extended Output Characteristics @ TJ = 25 C 24 20 8 0V 7 16 6 I D - Amperes I D - Amperes VGS = 5V 2V 1V VGS = 5V 1V 9 -1V 5 4 0V 12 -1V 8 3 2 - 2V 4 - 2V 1 - 3V 0 - 3V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 o 25 VGS = - 3.25V 1.E-02 8 - 3.50V 7 1.E-03 -1V I D - Amperes I D - Amperes 30 Fig. 4. Drain Current @ TJ = 25 C 1.E-01 VGS = 5V 0V 9 20 o Fig. 3. Output Characteristics @ TJ = 125 C 10 15 VDS - Volts VDS - Volts 6 5 4 - 3.75V 1.E-04 - 4.00V 1.E-05 - 4.25V - 2V 3 1.E-06 - 4.50V 2 1.E-07 1 - 4.75V - 5.00V - 3V 0 1.E-08 0 4 8 12 16 20 24 0 100 200 300 400 VDS - Volts 600 700 800 900 1000 1100 1200 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage o Fig. 5. Drain Current @ TJ = 100 C 1.E-01 500 1.E+11 ∆ VDS = 700V - 100V VGS = - 3.50V 1.E+10 1.E-02 - 4.00V 1.E-03 - 4.25V 1.E-04 1.E+09 R O - Ohms I D - Ampere - 3.75V 1.E+08 o TJ = 25 C 1.E+07 o - 4.50V 1.E-05 - 4.75V - 5.00V 1.E-06 TJ = 100 C 1.E+06 1.E+05 1.E+04 0 100 200 300 400 500 600 700 800 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -5.0 -4.8 -4.6 -4.4 -4.2 -4.0 VGS - Volts -3.8 -3.6 -3.4 -3.2 IXTH10N100D2 IXTT10N100D2 Fig. 8. RDS(on) Normalized to ID = 5A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 VGS = 0V 2.2 RDS(on) - Normalized RDS(on) - Normalized VGS = 0V 5V I D > 5A 2.2 1.8 1.4 1.0 o TJ = 125 C 1.8 1.4 1.0 0.6 o TJ = 25 C 0.6 0.2 -50 -25 0 25 50 75 100 125 0 150 4 8 Fig. 9. Input Admittance 16 16 20 24 Fig. 10. Transconductance 16 VDS = 30V 14 VDS = 30V 14 12 o 25 C o - 40 C 10 o TJ = - 40 C 12 o TJ = 125 C g f s - Siemens I D - Amperes 12 I D - Amperes TJ - Degrees Centigrade 8 6 o 25 C 10 o 125 C 8 6 4 4 2 2 0 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 2 4 6 8 10 12 14 16 18 I D - Amperes VGS - Volts Fig. 11. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 30 1.3 VGS = -10V 25 1.2 20 I S - Amperes BV / VGS(off) VGS(off) @ VDS = 25V 1.1 BVDSX @ VGS = - 5V 1.0 15 o TJ = 125 C 10 o TJ = 25 C 0.9 5 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.4 0.5 0.6 0.7 VSD - Volts 0.8 0.9 IXTH10N100D2 IXTT10N100D2 Fig. 13. Capacitance 100,000 Fig. 14. Gate Charge 5 f = 1 MHz VDS = 500V 4 I D = 5A 10,000 Ciss I G = 10mA 2 VGS - Volts Capacitance - PicoFarads 3 1,000 Coss 1 0 -1 -2 100 -3 Crss -4 -5 10 0 5 10 15 20 25 30 35 0 40 20 40 60 100 120 140 160 180 200 Fig. 16. Forward-Bias Safe Operating Area Fig. 15. Forward-Bias Safe Operating Area o @ TC = 75 C o @ TC = 25 C 100 80 QG - NanoCoulombs VDS - Volts 100 RDS(on) Limit RDS(on) Limit 25μs ID - Amperes 100μs 1ms 1 25μs 10 ID - Amperes 10 100μs 1ms 1 10ms 10ms o o TJ = 150 C TJ = 150 C 100ms o TC = 25 C Single Pulse o TC = 75 C Single Pulse DC 100ms Fig. 17. Maximum Transient 0Thermal Impedance 0 10 100 1 VDS - Volts 1,000 10 DC 100 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_10N100D2(8C)04-06-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.