IXTT10P60

Power MOSFETs IXTT10P60 IXTH10P60 VDSS ID25 RDS(on) = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 10 A IDM TC = 25°C, Pulse Width Limited by TJM - 40 A IA TC = 25°C - 10 A EAS TC = 25°C 3 J PD TC = 25°C 300 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Nm/lb.in. 4 6 g g VGS = 0V, ID = - 250μA - 600 VGS(th) VDS = VGS, ID = - 250μA - 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z z V - 5.0 V ±100 nA - 25 μA -1 mA 1 G International Standard Packages Low RDS (on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Avalanche Rated Low Package Inductance - Easy to Drive and to Protect Advantages Characteristic Values Min. Typ. Max. BVDSS RDS(on) 1.13 / 10 TO-247 (IXTH) Ω z z Easy to Mount Space Savings High Power Density Applications z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment DS98849E(01/13) IXTT10P60 IXTH10P60 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 5 Ciss Coss 10.5 S 4665 pF 437 pF 157 pF 33 ns 27 ns 85 ns 35 ns 135 nC 30 nC 45 nC VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.42 °C/W RthJC RthCS TO-247 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 10 A ISM Repetitive, Pulse Width Limited by TJM - 40 A VSD IF = IS, VGS = 0V, Note 1 - 3.0 V trr IF = -10A, -di/dt = -100A/μs VR = -100V, VGS = 0V 500 1 2 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns Terminals: 1 - Gate 3 - Source Note ∅P 3 2 - Drain 4 - Drain 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT10P60 IXTH10P60 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -32 -10 VGS = -10V - 7V - 6V -9 -8 VGS = -10V - 8V - 7V -28 -24 - 5.5V ID - Amperes ID - Amperes -7 -6 -5 -4 -3 -20 - 6V -16 -12 - 5.5V - 5V -8 -2 -4 -1 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 0 -8 -10 -15 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 5A Value vs. Junction Temperature -10 2.4 VGS = -10V - 7V - 6V -9 -8 VGS = -10V 2.0 R DS(on) - Normalized ID - Amperes -5 VDS - Volts -7 -6 -5 - 5V -4 -3 -2 I D = -10A 1.6 I D = - 5A 1.2 0.8 -1 - 4V 0 0.4 -1 -3 -5 -7 -9 -11 -13 -15 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -12 2.4 VGS = -10V 2.2 -10 2.0 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.8 1.6 1.4 -8 -6 -4 TJ = 25ºC 1.2 -2 1.0 0 0.8 0 -5 -10 -15 -20 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -25 -30 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT10P60 IXTH10P60 Fig. 8. Transconductance Fig. 7. Input Admittance -20 24 TJ = - 40ºC -18 20 -16 g f s - Siemens ID - Amperes -14 -12 -10 -8 TJ = 125ºC 25ºC - 40ºC -6 16 25ºC 12 125ºC 8 -4 4 -2 0 -3.0 0 -3.4 -3.8 -4.2 -4.6 -5.0 -5.4 -5.8 -6.2 0 -2 -4 -6 VGS - Volts -10 -12 -14 -16 -18 -20 -22 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -30 -10 VDS = - 300V -9 -25 I D = - 5A -8 I G = -1mA -7 VGS - Volts -20 IS - Amperes -8 -15 -10 TJ = 125ºC -6 -5 -4 -3 TJ = 25ºC -2 -5 -1 0 0 0 -0.5 -1 -1.5 -2 0 -2.5 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1 Ciss Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT10P60 IXTH10P60 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC - 100 - 100 RDS(on) Limit RDS(on) Limit 100µs 100µs - 10 -10 10ms -1 100ms ID - Amperes ID - Amperes 1ms 1ms 10ms -1 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse - 0.1 - 10 DC TC = 75ºC Single Pulse - 100 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved - 1000 - 0.1 - 10 - 100 - 1000 VDS - Volts IXYS REF: T_10P60(7X-L69)9-17-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.