IXTT16N10D2

IXTT16N10D2 IXTH16N10D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = >  100V 16A 64m  D N-Channel TO-268 (IXTT) G G S S D (Tab) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 175C 100 V VDGX TJ = 25C to 175C, RGS = 1M 100 V TO-247 (IXTH) VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 830 W - 55 ... +175 175 - 55 ... +175 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 100 VGS(off) VDS = 25V, ID = 4mA IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 2.0 Advantages V - 4.5 V 100 nA 5 A 250  A TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved 64 m 16 A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100258D(7/17) IXTT16N10D2 IXTH16N10D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 8A, Note 1 7 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf 5700 pF 1980 pF 940 pF 45 ns 43 ns 340 ns 70 ns 225 nC 22 nC 126 nC 0.21 0.18 C/W C/W VGS = + 5V, VDS = 50V, ID = 8A Qgd RthJC RthCS S RG = 3.3 (External) Qg(on) Qgs 11 Resistive Switching Times VGS = + 5V, VDS = 50V, ID = 8A TO-247 TO-268 Outline Terminals: 1 - Gate 3 - Source 2,4 - Drain Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 100V, ID = 5.6A, TC = 75C, tp = 5s 556 W TO-247 Outline D A A2 A2 Source-Drain Diode Q + R Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S D2 + D1 D Characteristic Values Min. Typ. Max. A 0P O + 0K M D B M B E 0P1 1 2 3 4 ixys option L1 VSD IF = 16A, VGS = -10V, Note 1 0.80 trr IRM QRM IF = 8A, -di/dt = 100A/s VR = 100V, VGS = -10V 205 8.50 0.88 1.30 V ns A μC C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT16N10D2 IXTH16N10D2 o Fig. 1. Output Characteristics @ TJ = 25 C o VGS = 5V 4V 3V 14 220 VGS = 5V 200 180 12 2V 1V 8 4V 160 10 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C 240 16 6 140 3V 120 100 2V 80 0V 4 60 -1V 1V 40 2 0V 20 - 2V 0 -1V -2V 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 30 35 Fig. 4. Drain Current @ TJ = 25 C 30 16 VGS = 5V 2V 14 VGS = 0V 25 1V 12 20 10 I D - Amperes I D - Amperes 25 o o Fig. 3. Output Characteristics @ TJ = 150 C 0V 8 - 0.5V 6 2 0 0 0.1 0.2 0.3 0.4 0.5 - 0.4V 15 - 0.8V 10 -1V 4 - 1.2V -1.5V 5 - 1.6V - 2V - 2.5V 0 - 2.0V - 2.4V 0.6 0 10 20 VDS - Volts 50 1.E+10 ∆VDS = 50V - 25V 1.E+09 VGS = 0V 25 40 Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ TJ = 100 C 30 30 VDS - Volts o 1.E+08 - 0.4V 20 1.E+07 RO - Ohms I D - Amperes 20 VDS - Volts VDS - Volts - 0.8V 15 - 1.2V 10 1.E+06 o TJ = 25 C 1.E+05 o TJ = 100 C 1.E+04 - 1.6V 1.E+03 - 2.0V - 2.4V 1.E+02 5 0 1.E+01 0 10 20 30 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 40 50 -5 -4 -3 -2 VGS - Volts -1 0 IXTT16N10D2 IXTH16N10D2 Fig. 8. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 1.4 2.5 VGS = 0V 2.0 RDS(on) - Normalized RDS(on) - Normalized VGS = 0V 5V I D = 8A 1.3 1.2 1.1 1.0 o TJ = 25 C o TJ = 150 C 1.5 1.0 o TJ = 150 C 0.5 0.9 o TJ = 25 C 0.0 0.8 -50 -25 0 25 50 75 100 125 150 0 175 5 10 15 20 25 30 Fig. 9. Input Admittance 60 o TJ = - 40 C VDS = 20V 30 50 o 25 C 25 g f s - Siemens 40 I D - Amperes 40 Fig. 10. Transconductance 35 VDS = 20V 30 o TJ = 150 C 20 o 150 C 20 15 o 25 C o - 40 C 10 10 5 0 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1.5 10 20 30 40 50 60 I D - Amperes VGS - Volts Fig. 11. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 1.3 50 VGS = -10V 45 40 1.2 35 I S - Amperes VGS(off) @ VDS = 25V BV / VGS(off) 35 I D - Amperes TJ - Degrees Centigrade 1.1 BVDSX @ VGS = - 5V 1.0 30 25 20 o TJ = 150 C 15 o TJ = 25 C 10 0.9 5 0 0.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTT16N10D2 IXTH16N10D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 100,000 f = 1 MHz VDS = 50V 4 I D = 8A I G = 10mA 2 10,000 Ciss VGS - Volts Capacitance - PicoFarads 3 Coss 1,000 1 0 -1 -2 -3 Crss -4 -5 100 0 5 10 15 20 25 30 35 0 40 20 40 60 Fig. 15. Forward-Bias Safe Operating Area 100 120 140 160 180 200 220 240 Fig. 16. Forward-Bias Safe Operating Area o o @ TC = 25 C 1,000 80 QG - NanoCoulombs VDS - Volts @ TC = 75 C 1,000 RDS(on) Limit RDS(on) Limit 25μs 25μs 100μs 1ms 10ms 10 100 100μs I D - Amperes I D - Amperes 100 100ms 1ms 10 10ms DC 100ms o o TJ = 175 C DC TJ = 175 C o o TC = 25 C Single Pulse TC = 75 C Single Pulse Fig. 17. Maximum Transient Thermal Impedance 1 1 1 1.000 10 100 1 10 VDS - Volts 100 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 0.300 Z (th)JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16N10D2(8C) 11-21-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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