IXTT1N450HV

IXTT1N450HV IXTH1N450HV High Voltage Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode = 4500V = 1A   80 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1 A IDM TC = 25C, Pulse Width Limited by TJM 3 A PD TC = 25C 520 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 10..65 / 22..14.6 N/lb 1.13/10 Nm/lb.in 2.5 6.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force (TO-263HV) Md Mounting Torque (TO-247HV) Weight TO-263HV TO-247HV TO-247HV (IXTH) G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   High Blocking Voltage High Voltage Package Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 A 25 μA μA TJ = 100C VGS = 10V, ID = 50mA, Note 1 6.0  VGS(th) RDS(on) 3.5  15 80 V   Applications     © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems DS100500D(04/14) IXTT1N450HV IXTH1N450HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 200mA, Note 1 0.40 Ciss Coss TO-268HV Outline E 0.70 S 1700 pF 80 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 29 Gate Input Resistance 12 td(on) Resistive Switching Times 30 ns 43 ns 73 ns 120 ns 46 nC 8 nC 23 nC 0.21 0.24 C/W C/W td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd RthJC RthCS TO-247HV E1 D 1 H 2 3 2 C e D1 D2 A1 L4 e A C2 D3 1 b PINS: 1 - Gate 2 - Source 3 - Drain  RGi tr 3 pF  L2 L3 A2 L Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 5 A VSD IF = 1A, VGS = 0V, Note 1 2.0 V trr IF = 1A, -di/dt = 50A/μs, VR = 100V 1.75 TO-247HV Outline E R 0P E1 0P1 D1 D μs 4 D2 1 2 3 L1 D3 L e Note A A2 Q S e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 1. Pulse test, t  300s, duty cycle, d  2%. 3X IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTT1N450HV IXTH1N450HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 1.0 VGS = 10V 1.2 0.9 VGS = 10V 7V 0.8 1.0 0.7 I D - Amperes I D - Amperes 7V 0.8 0.6 6.5V 0.4 0.6 6V 0.5 0.4 0.3 0.2 0.2 0.1 6V 0.0 5V 0.0 0 20 40 60 80 100 120 140 0 20 40 60 VDS - Volts 100 120 140 160 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 2.6 80 VDS - Volts 2.4 VGS = 10V VGS = 10V 2.2 2.2 RDS(on) - Normalized RDS(on) - Normalized I D = 1A 1.8 I D = 0.5A 1.4 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.6 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 TJ - Degrees Centigrade I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.2 1.2 1.0 1.0 I D - Amperes I D - Amperes 0.8 0.6 0.4 0.8 TJ = 125ºC 0.6 25ºC - 40ºC 0.4 0.2 0.2 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXTT1N450HV IXTH1N450HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3.0 3.0 TJ = - 40ºC 2.0 2.5 2.0 25ºC I S - Amperes g f s - Siemens 2.5 125ºC 1.5 1.5 TJ = 125ºC 1.0 1.0 0.5 0.5 TJ = 25ºC 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 30 35 40 VSD - Volts I D - Amperes Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 f = 1 MHz VDS = 1000V 9 8 Capacitance - PicoFarads I D = 0.5A I G = 10mA VGS - Volts 7 6 5 4 3 C iss 1,000 C oss 100 2 1 C rss 0 10 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXTT1N450HV IXTH1N450HV Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 10 10 RDS(on) Limit RDS(on) Limit 25µs 100µs 25µs 1 1 I D - Amperes I D - Amperes 100µs 1ms 0.1 1ms 0.1 10ms TJ = 150ºC DC TC = 25ºC Single Pulse 10ms TJ = 150ºC 100ms 100ms TC = 75ºC Single Pulse 0.01 DC 0.01 100 1,000 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_1N450(H7-P640)10-11-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.