IXTT20P50P

IXTT20P50P IXTH20P50P PolarPTM Power MOSFET VDSS ID25 RDS(on) P-Channel Enhancement Mode Avalanche Rated = =  - 500V - 20A  450m TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 20 A IDM TC = 25C, Pulse Width Limited by TJM - 60 A IA TC = 25C - 20 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 460 W - 55 ... +150 150 - 55 ... +150 C C C Features 300 260 °C °C  1.13 / 10 Nm/lb.in.  4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXTH) G D S G = Gate S = Source    D (Tab) D = Drain Tab = Drain International Standard Packages Avalanche Rated Rugged PolarPTM Process Low Package Inductance Fast Intrinsic Diode Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 A - 500 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density V Applications V  100 nA  - 4.5 - 25 A - 200 A    High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 450 m DS99984C(11/16) IXTT20P50P IXTH20P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 11 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 18 S 5120 pF 525 pF 75 pF 26 ns 32 ns 80 ns 34 ns 103 nC 28 nC 38 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.27 C/W RthJC RthCS 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 20 A ISM Repetitive, Pulse Width Limited by TJM - 80 A VSD IF = -10A, VGS = 0V, Note 1 - 2.8 V trr QRM IRM IF = -10A, -di/dt = -150A/s VR = -100V, VGS = 0V Note 406 8.93 - 44 ns μC A 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT20P50P IXTH20P50P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC -20 -50 VGS = -10V - 7V -18 -16 -40 -35 -14 - 6V I D - Amperes I D - Amperes VGS = -10V - 7V -45 -12 -10 -8 -6 -30 - 6V -25 -20 -15 - 5V -4 -10 -2 -5 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -10 -15 -20 -25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = -10A Value vs. Junction Temperature 2.4 -20 VGS = -10V - 7V -18 -30 VGS = -10V 2.0 R DS(on) - Normalized -16 I D - Amperes -5 VDS - Volts - 6V -14 -12 -10 - 5V -8 -6 -4 I D = - 20A 1.6 I D = -10A 1.2 0.8 -2 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -10A Value vs. Drain Current 2.4 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature -22 VGS = -10V 2.2 -18 TJ = 125ºC 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 1.4 -14 -10 -6 1.2 TJ = 25ºC 1.0 -2 0.8 0 -5 -10 -15 -20 -25 -30 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved -35 -40 -45 -50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT20P50P IXTH20P50P Fig. 8. Transconductance Fig. 7. Input Admittance 40 -35 TJ = - 40ºC 35 -30 30 g f s - Siemens I D - Amperes -25 -20 -15 TJ = 125ºC 25ºC - 40ºC -10 25ºC 25 20 125ºC 15 10 -5 5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 VGS - Volts -20 -25 -30 -35 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -60 -10 VDS = - 250V -9 -50 I D = -10A -8 I G = -1mA -7 V GS - Volts I S - Amperes -40 -30 TJ = 125ºC -20 -6 -5 -4 -3 TJ = 25ºC -2 -10 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3.5 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 - 100 RDS(on) Limit 100µs 1ms 1,000 -10 I D - Amperes Capacitance - PicoFarads C iss C oss 100 10ms 100ms -1 C rss TJ = 150ºC f = 1 MHz TC = 25ºC Single Pulse 10 0 -5 DC -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. - 0.1 - 10 - 100 VDS - Volts - 1000 IXTT20P50P IXTH20P50P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-268 OUTLINE PINS: 1 - Gate 2,4 - Drain 3 - Source © 2016 IXYS CORPORATION, All Rights Reserved TO-247 OUTLINE PINS: 1 - Gate 2,4 - Drain 3 - Source IXYS REF: T_20P50P(B7) 5-13-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.