IXTT220N20X4HV

IXTT220N20X4HV X4-Class Power MOSFETTM VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated 200V 220A 5.5m G S TO-268HV (IXTT..HV) G Symbol Test Conditions VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by T JM 220 160 400 A A A IA TC = 25C 110 A EAS TC = 25C 900 mJ dv/dt IS  IDM, VDD  VDSS, T J  150°C 50 V/ns PD TC = 25C 800 W Maximum Ratings -55 ... +175 C  TJM 175 C  Tstg -55 ... +175 C 260 °C 4 g TJ TSOLD = =  Plastic Body for 10s Weight S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features   International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 Littelfuse, Inc.  V   4.5 V 100 nA   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 1.5 mA T J = 150C 4.1 5.5 m DS101008B(12/20) IXTT220N20X4HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 90 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 150 S 1.6  12.3 nF 1650 pF 5.4 pF 900 3400 pF pF 30 ns 15 ns Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 87 ns 6 ns 157 nC 50 nC 46 nC 0.19 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 220 A ISM Repetitive, pulse Width Limited by T JM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 110A, -di/dt = 100A/µs 140 770 11 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTT220N20X4HV Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC V GS = 15V 10V 8V 200 700 7V 160 9V 600 8V I D - Amperes ID - Amperes VGS = 15V 10V 800 120 6V 80 500 400 7V 300 200 6V 40 100 5V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 0 5 10 VDS - Volts 3.0 VGS = 15V 10V 8V 25 VGS = 10V 2.6 7V R DS(on) - Normalized 160 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 200 15 VDS - Volts 6V 120 80 2.2 I D = 220A 1.8 I D = 110A 1.4 1.0 5V 40 0.6 4V 0.2 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 V DS - Volts Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 4.5 100 125 150 175 BVDSS / VGS(th) - Normalized 1.2 3.5 RDS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 50 TJ - Degrees Centigrade TJ = 150oC 3.0 2.5 2.0 TJ = 25oC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 100 200 300 400 I D - Amperes © 2020 Littelfuse, Inc. 500 600 700 800 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTT220N20X4HV Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 220 180 V DS = 10V 200 160 180 External Lead Current Limit 140 160 I D - Amperes I D - Amperes 120 100 80 60 140 120 100 80 TJ = 150oC 60 40 25oC 40 20 - 40oC 20 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 600 400 VDS = 10V 350 TJ = - 40oC 500 400 250 I S - Amperes g f s - Siemens 300 25oC 200 150 150oC 300 200 TJ = 150oC 100 100 50 TJ = 25oC 0 0 0 40 80 120 160 200 240 280 320 0.2 0.4 0.6 0.8 ID - Amperes 1.2 1.4 1.6 1.8 2.0 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V I D = 110A I G = 10mA Ciss 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 1.0 6 5 4 3 2 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1,000 IXTT220N20X4HV Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 18 RDS(on) Limit 16 25µs 100 100µs Lead Current Limit 12 I D - Amperes E OSS - MicroJoules 14 10 8 10 1ms 6 1 4 10ms o TJ = 175 C DC o TC = 25 C Single Pulse 2 0 0 20 40 60 80 100 120 0.1 Fig. 15. Transient Thermal Impedance 10 140 160 Maximum 180 200 1 100 1,000 VDS - Volts VDS - Volts 1 Fig. 15. Maximum Transient Thermal Impedance aaaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 Littelfuse, Inc. IXYS REF: T_220N20X4 (208-S203) 5-12-20 IXTT220N20X4HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain Littelfuse reserves the right to change limits, test conditions and dimensions. IXTT220N20X4HV Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc.