IXTT240N15X4HV

Advance Technical Information IXTT240N15X4HV IXTH240N15X4 X4-Class Power MOSFETTM VDSS ID25 RDS(on) = =  150V 240A  4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 240 160 420 A A A IA TC = 25C 120 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 940 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 4.5 Applications V  100 nA  RDS(on) 25 A 1.5 mA TJ = 150C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved 3.6 4.4 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100908A(6/18) IXTT240N15X4HV IXTH240N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 90 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 150 S 1.2  8900 pF 1450 pF 6 pF 1020 4100 pF pF 30 ns 8 ns 92 ns 7 ns 195 nC 52 nC 50 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 240 A ISM Repetitive, pulse Width Limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 120A, -di/dt = 100A/μs 130 0.6 9.4 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTT240N15X4HV IXTH240N15X4 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 900 240 VGS = 15V VGS = 10V 9V 8V 200 800 10V 7V 9V 700 600 I D - Amperes I D - Amperes 160 120 6V 80 8V 500 7V 400 300 6V 200 40 100 5V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 240 2.8 VGS = 15V 10V 8V 2.6 7V RDS(on) - Normalized I D - Amperes 25 30 VGS = 10V 2.4 160 6V 120 80 5V 2.2 2.0 1.8 I D = 240A 1.6 I D = 120A 1.4 1.2 1.0 40 0.8 4V 0.6 0 0 4.5 0.5 1 1.5 2 -50 2.5 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 200 15 VDS - Volts VDS - Volts o TJ = 150 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 100 200 300 400 500 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 600 700 800 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTT240N15X4HV IXTH240N15X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 300 180 VDS = 10V 160 250 External Lead Current Limit 140 200 I D - Amperes I D - Amperes 120 100 80 60 150 o TJ = 150 C o 25 C 100 o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 800 o TJ = - 40 C VDS = 10V 350 700 600 o 25 C 250 I S - Amperes g f s - Siemens 300 200 o 150 C 150 500 400 300 o 100 200 50 100 TJ = 150 C o TJ = 25 C 0 0 0 40 80 120 160 200 240 280 320 360 0.2 0.4 0.6 0.8 1.0 1.4 1.6 1.8 2.0 2.2 Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 9 VDS = 75V I D = 120A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 1.2 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 12 RDS(on) Limit 25μs 8 100 100μs I D - Amperes E OSS - MicroJoules 10 6 4 External Lead Limit 10 1ms o TJ = 175 C 2 o TC = 25 C Single Pulse 1 0 DC Fig. 15. Maximum Transient Thermal Impedance 1 0 20 40 60 80 100 120 140 1 10 100 10ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_240N15X4 (18) 6-14-18 IXTT240N15X4HV IXTH240N15X4 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.