Standard Power MOSFET
IXTH 24P20
IXTT 24P20
P-Channel Enhancement Mode
Avalanche Rated
Test Conditions
VDSS
TJ = 25°C to 150°C
-200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
-200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
Maximum Ratings
A
ID25
TC = 25°C
-24
IDM
TC = 25°C, pulse width limited by TJ
-96
A
IAR
TC = 25°C
-24
A
EAR
TC = 25°C
30
mJ
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
400
°C
250
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body for 10s
Md
Mounting torque (TO-247)
Weight
TO-247
TO-268
1.13/10 Nm/lb.in.
6
5
Symbol
Test Conditions
VDSS
V GS = 0 V, ID = -250 µA
-200
VGS(th)
V DS = VGS, ID = -250 µA
-3.0
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = 0.8 • VDSS
V GS = 0 V
RDS(on)
VGS = -10 V, ID = 0.5 • ID25
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
V
-5.0
V
±100
nA
-25
-1
µA
mA
0.15
Ω
TO-247 (IXTH)
D (TAB)
TO-268 (IXTT)
G
S
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
Features
• International standard packages
•
•
•
•
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (
很抱歉,暂时无法提供与“IXTT24P20”相匹配的价格&库存,您可以联系我们找货
免费人工找货