IXTT40N50L2

IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = 500V = 40A  170m  RDS(on) N-Channel Enhancement Mode Avalanche rated TO-268 (IXTT) G S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 40 A IDM TC = 25C, Pulse Width Limited by TJM 80 A IA TC = 25C 40 A EAS TC = 25C 2 J PD TC = 25C 540 W -55 to +150 C TJM +150 C Tstg -55 to +150 C 300 260 °C °C 1.13/10 Nm/lb.in 4.0 5.5 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247&TO-3P) Weight TO-268 TO-3P TO-247 G D G VGS = 0V, ID = 1mA 500  VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All rights reserved  V 4.5 V 100 nA S D (Tab) D = Drain Tab = Drain Features  BVDSS D G = Gate S = Source  Characteristic Values Min. Typ. Max. D (Tab) TO-247 (IXTH)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S Designed for Linear Operation International Standard Packages Avalanche Rated Molding Epoxies Meet UL 94 V-0 Flammability Classification Guaranteed FBSOA at 75C Applications   50 A 300 A  170 m   Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100100B(6/17) IXTT40N50L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 11 VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs 15 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S nF 655 pF 155 pF 50 ns 133 ns 127 ns 44 ns 320 nC 64 nC 198 nC 0.23 C/W RthJC RthCS 19 10.4 Ciss Coss IXTQ40N50L2 IXTH40N50L2 (TO-247&TO-3P) C/W 0.25 Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s 320 Typ. Max. W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/μs, VR = 100V 500 ns Note 1: Pulse test, t  300s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT40N50L2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 40 100 VGS = 20V VGS = 20V 12V 10V 35 12V 9V 80 25 I D - Amperes 30 I D - Amperes IXTQ40N50L2 IXTH40N50L2 8V 20 15 10V 60 9V 40 7V 8V 10 20 7V 6V 5 5V 0 0 1 2 3 4 5 6 6V 5V 0 7 8 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 40 2.8 VGS = 20V 12V 10V 9V 30 VGS = 10V 2.4 RDS(on) - Normalized 35 I D - Amperes 20 VDS - Volts 8V 25 20 7V 15 I D = 40A 2.0 I D = 20A 1.6 1.2 10 6V 0.8 5 5V 0 0 2 4 6 8 10 12 0.4 14 -50 16 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 45 o VGS = 10V 2.8 TJ = 125 C 40 30 I D - Amperes RDS(on) - Normalized 35 2.4 2.0 o TJ = 25 C 1.6 25 20 15 10 1.2 5 0.8 0 0 10 20 30 40 50 I D - Amperes © 2017 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2 Fig. 8. Transconductance Fig. 7. Input Admittance 36 70 o TJ = - 40 C 60 30 o 25 C 50 40 24 g f s - Siemens I D - Amperes o TJ = 125 C o 25 C o - 40 C 30 o 125 C 18 12 20 6 10 0 0 3 4 5 6 7 8 9 0 10 10 20 30 VGS - Volts 50 60 70 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 120 VDS = 250V 14 I D = 20A 100 I G = 10mA 12 V GS - Volts 80 I S - Amperes 40 I D - Amperes 60 40 10 8 6 o TJ = 125 C 4 o TJ = 25 C 20 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Capacitance - PicoFarads f = 1 MHz Z (th)JC - K / W 10,000 Ciss Coss 0.1 0.01 1,000 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT40N50L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area o o @ TC = 25 C 100 IXTQ40N50L2 IXTH40N50L2 @ TC = 75 C 100 RDS(on) Limit RDS(on) Limit 25μs 25μs 100μs 100μs 10 10 I D - Amperes I D - Amperes 1ms 10ms 100ms 1 1ms 10ms 1 DC DC TJ = 150oC 100ms TJ = 150oC o TC = 75oC Single Pulse TC = 25 C Single Pulse 0.1 0.1 10 100 1000 10 TO-3P Outline TO-268 Outline 100 1000 VDS - Volts VDS - Volts TO-247 Outline A A2 E 0P 0P1 E1 D A A2 A2 Q S + + D1 D 2 L1 D2 0P1 1 3 S + D1 D 4 1 + R + A 0P O + 0K M D B M B E 2 3 4 ixys option L1 C A1 E1 L A1 Terminals: 1 - Gate 3 - Source 2,4 - Drain b b2 c b4 e PINS: 1 - Gate 2, 4 - Drain 3 - Source © 2017 IXYS CORPORATION, All rights reserved c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS REF: T_40N50L2(8R)6-16-17-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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