IXTT440N04T4HV

Advance Technical Information IXTT440N04T4HV TrenchT4TM Power MOSFET VDSS ID25 = 40V = 440A  RDS(on) 1.25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 15 V ID25 ILRMS TC = 25C Lead Current Limit, RMS 440 160 A A IDM TC = 25C, Pulse Width Limited by TJM 1200 A G IA TC = 25C 440 A EAS TC = 25C 1.5 J PD TC = 25C 940 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 °C °C 4 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 10 A 1 mA RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved 4.0 High Power Density Easy to Mount Space Savings Applications V  V     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 1.25 m DS100719(4/16) IXTT440N04T4HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 110 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf 1.1  26 nF pF 235 pF 44 ns 250 ns 120 ns 74 ns 480 nC 136 nC 162 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs S 3570 Crss td(on) 180 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs Note 72 110 3 VR = 30V 440 A 1760 A 1.4 V ns nC A 1. Pulse test, t  300μs, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT440N04T4HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 VGS = 10V VGS = 15V 10V 9V 300 8V 300 250 200 7V 150 7V 250 I D - Amperes I D - Amperes 8V 100 200 6.5V 150 100 6V 6V 50 50 5V 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 0.5 1 1.5 2 2.5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 100A Value vs. Junction Temperature 1.8 VGS = 15V 10V 8V 300 VGS = 10V I D > 100A 1.6 250 RDS(on) - Normalized I D - Amperes 7V 200 150 6V 100 5V 50 1.4 1.2 1.0 0.8 0 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 160 1.6 External Lead Current Limit 140 TJ = 175ºC 120 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 100A vs. Drain Current 1.8 25 1.4 VGS = 10V 15V 1.2 TJ = 25ºC 100 80 60 40 1.0 20 0.8 0 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTT440N04T4HV Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 VDS = 10V 175 g f s - Siemens 25ºC 125 100 TJ = 150ºC 25ºC - 40ºC 75 50 300 150ºC 250 200 150 100 25 50 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 100 120 140 160 180 200 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 VDS = 20V 9 250 I D = 220A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes TJ = - 40ºC 350 150 I D - Amperes VDS = 10V 400 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 100 200 300 400 500 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 f = 1 MHz 100µs C iss I D - Amperes Capacitance - nanoFarads RDS(on) Limit 1,000 10 100 External Lead Current Limit C oss 10 Crss TJ = 175ºC 1ms TC = 25ºC 10ms 100ms Single Pulse DC 1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTT440N04T4HV Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 600 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 450 RG = 2Ω , VGS = 10V VDS = 20V 400 400 t r - Nanoseconds t r - Nanoseconds RG = 2Ω , VGS = 10V VDS = 20V 500 I D = 440A 300 200 350 TJ = 150ºC 300 250 TJ = 25ºC I D = 220A 100 200 0 150 25 50 75 100 125 150 220 240 260 280 300 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 800 160 VDS = 20V 100 400 80 300 60 I D = 220A 200 40 100 20 0 6 8 10 12 I D = 220A 72 120 70 100 66 25 160 600 150 500 50 75 130 72 120 TJ = 25ºC 110 68 100 66 280 300 320 340 90 150 125 360 380 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 400 420 90 440 650 td(off) 550 TJ = 150ºC, VGS = 10V VDS = 20V 400 450 I D = 220A 300 350 I D = 440A 200 250 100 150 0 50 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds 140 TJ = 150ºC 260 100 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf t d(off) - Nanoseconds t f - Nanoseconds td(off) VDS = 20V 74 110 I D = 440A 68 t f - Nanoseconds tf 76 130 TJ - Degrees Centigrade RG = 2Ω, VGS = 10V 240 150 140 74 14 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 78 440 160 td(off) RG - Ohms 220 420 VDS = 20V 0 4 70 400 t d(off) - Nanoseconds I D = 440A 80 380 76 120 2 360 RG = 2Ω, VGS = 10V 140 600 500 tf 78 t d(on) - Nanoseconds t r - Nanoseconds td(on) TJ = 150ºC, VGS = 10V 700 340 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 80 180 t f - Nanoseconds 900 320 I D - Amperes IXTT440N04T4HV Fig. 19. Maximum Transient Thermal Impedance 1 Fig. 19. Maximum Transient Thermal Impedance aaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_440N04T4 (T7-M04) 4-27-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.