IXTT440N055T2

Advance Technical Information IXTH440N055T2 IXTT440N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability) 440 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 1200 A IA TC = 25°C 200 A EAS TC = 25°C 1.5 J PD TC = 25°C 1000 W Maximum Ratings -55 ... +175 °C TJ S D (Tab) G = Gate S = Source 175 °C -55 ... +175 °C Features 300 260 °C °C z 1.13 / 10 Nm/lb.in. 6 4 g g 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 55 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2 © 2009 IXYS CORPORATION, All Rights Reserved D (Tab) S G TJM TL Tsold D TO-268 (IXTT) Tstg RDS(on) = 55V = 440A Ω ≤ 1.8mΩ D = Drain Tab = Drain International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z Advantages z V 4.0 V ±200 nA 10 μA 750 μA 1.8 mΩ z z Easy to Mount Space Savings High Power Density Applications z z z DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100220(12/09) IXTH440N055T2 IXTT440N055T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 85 140 S 25 nF 3370 pF 645 pF 1.24 Ω 26 ns 28 ns 72 ns 62 ns 405 nC 92 nC 102 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCH TO-247 (IXTH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 100A, VGS = 0V IRM QRM 76 -di/dt = 100A/μs VR = 27.5V 440 A 1400 A 1.2 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline ns 3.7 A 140 nC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH440N055T2 IXTT440N055T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 400 350 VGS = 15V 10V 7V 300 300 250 6V 6V ID - Amperes ID - Amperes VGS = 15V 10V 7V 350 200 5V 150 100 250 200 5V 150 100 4V 50 50 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 VDS - Volts 2.0 2.5 Fig. 4. RDS(on) Normalized vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.2 350 VGS = 15V 10V 8V 7V 300 VGS = 10V 2.0 6V R DS(on) - Normalized 5V 200 150 4V 100 ID < 440A 1.8 250 ID - Amperes 1.5 VDS - Volts 1.6 1.4 1.2 1.0 50 0.8 3V 0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized vs. Drain Current 180 2.2 160 2.0 External Lead Current limit TJ = 175ºC 1.8 120 ID - Amperes R DS(on) - Normalized 140 1.6 VGS = 10V 15V 1.4 100 80 60 1.2 40 TJ = 25ºC 1.0 20 0.8 0 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH440N055T2 IXTT440N055T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 TJ = - 40ºC 240 180 160 200 25ºC g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 25ºC - 40ºC 80 60 160 150ºC 120 80 40 40 20 0 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 27.5V 9 300 I D = 220A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 150ºC 6 5 4 3 100 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 400 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100,000 Ciss 10,000 25µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100µs External Lead Limit 100 1ms 1,000 10 TJ = 175ºC Crss 10ms 100ms TC = 25ºC Single Pulse f = 1 MHz 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 IXTH440N055T2 IXTT440N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 70 RG = 1Ω , VGS = 10V 60 RG = 1Ω , VGS = 10V VDS = 27.5V VDS = 27.5V 60 100A < I D < 200A t r - Nanoseconds t r - Nanoseconds 50 40 30 50 TJ = 125ºC 40 30 20 TJ = 25ºC 20 10 10 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 60 200 50 I D = 100A 150 40 100 30 50 20 0 3 4 5 6 7 8 9 td(off) - - - - VDS = 27.5V 100 60 90 70 30 60 20 25 10 35 45 55 70 td(off) - - - - 95 105 115 50 125 60 120 100 TJ = 25ºC, 125ºC 50 80 40 60 30 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 tf 40 200 td(off) - - - - 400 TJ = 125ºC, VGS = 10V I D = 200A VDS = 27.5V 600 350 500 300 400 250 I D = 100A 300 200 200 150 100 100 0 50 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 27.5V 450 700 t d(off) - Nanoseconds t f - Nanoseconds 85 800 t f - Nanoseconds tf RG = 1Ω, VGS = 10V 120 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 140 100 65 TJ - Degrees Centigrade 80 80 80 40 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 60 I D = 200A I D = 100A 50 RG - Ohms 40 110 RG = 1Ω, VGS = 10V 70 10 2 200 120 tf 80 t d(on) - Nanoseconds 70 I D = 200A 250 1 180 t d(off) - Nanoseconds VDS = 27.5V 160 90 80 TJ = 125ºC, VGS = 10V 300 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 350 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 400 tr 120 ID - Amperes IXTH440N055T2 IXTT440N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance dfafas 0.300 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_440N055T2(98)12-11-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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