IXTT500N04T2

Advance Technical Information IXTH500N04T2 IXTT500N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 500A Ω ≤ 1.6mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 500 A D D (Tab) S Maximum Ratings ILRMS Lead Current Limit, RMS IDM TC = 25°C, Pulse Width Limited by TJM IA 160 A 1250 A TC = 25°C 100 A EAS TC = 25°C 800 mJ PD TC = 25°C 1000 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 TO-268 (IXTT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 40 VGS(th) VDS = VGS, ID = 250μA 1.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 © 2009 IXYS CORPORATION, All Rights Reserved z z z V 3.5 V ±200 nA 10 μA 750 μA 1.6 mΩ Easy to Mount Space Savings High Power Density Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-Mode Power Supplies • Electronics Ballast Application • Class D Audio Amplifiers DS100218(12/09) IXTH500N04T2 IXTT500N04T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 75 125 S 25 nF 4410 pF 970 pF 1.1 Ω 37 ns 16 ns 68 ns 44 ns 405 nC 105 nC 118 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCH TO-247 (IXTH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 100A, VGS = 0V IRM QRM 84 -di/dt = 100A/μs VR = 20V 500 A 1500 A 1.2 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline ns 3.1 A 130 nC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH500N04T2 IXTT500N04T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 400 350 VGS = 15V 10V 9V 8V 300 VGS = 15V 350 300 250 7V 200 6V ID - Amperes ID - Amperes 10V 8V 7V 6V 150 100 5V 50 250 200 5V 150 100 50 4V 0 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 VDS - Volts 2.0 2.5 Fig. 4. RDS(on) Normalized vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.0 320 240 VGS = 10V 7V 1.8 6V 1.6 R DS(on) - Normalized VGS = 15V 10V 8V 280 ID - Amperes 1.5 VDS - Volts 200 160 5V 120 80 ID < 500A 1.4 1.2 1.0 4V 0.8 40 3V 0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.0 160 TJ = 175ºC External Lead Current limit 1.8 120 1.6 1.4 ID - Amperes R DS(on) - Normalized 140 VGS = 10V 15V 1.2 100 80 60 TJ = 25ºC 40 1.0 20 0.8 0 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH500N04T2 IXTT500N04T2 Fig. 8. Transconductance Fig. 7. Input Admittance 250 240 TJ = - 40ºC 200 g f s - Siemens ID - Amperes 200 150 100 TJ = 150ºC 25ºC - 40ºC 50 25ºC 160 150ºC 120 80 40 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 20 40 60 80 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 180 200 220 240 260 Fig. 10. Gate Charge VDS = 20V 9 300 I D = 250A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 140 10 350 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 400 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 Capacitance - PicoFarads 120 ID - Amperes 10,000 RDS(on) Limit 1,000 Ciss 25µs ID - Amperes 10,000 Coss 100µs External Lead Limit 100 1ms 1,000 10ms Crss 10 TJ = 175ºC 100ms DC TC = 25ºC Single Pulse f = 1 MHz 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 IXTH500N04T2 IXTT500N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 70 RG = 1Ω , VGS = 10V 60 RG = 1Ω , VGS = 10V VDS = 20V VDS = 20V 50 100A < I D < 200A t r - Nanoseconds t r - Nanoseconds 50 40 30 TJ = 125ºC 40 30 20 20 TJ = 25ºC 10 10 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 140 t r - Nanoseconds 300 80 200 60 I D = 100A 100 0 4 5 6 7 8 9 VDS = 20V 110 100 80 90 60 80 I D = 200A 60 0 25 10 35 45 55 tf 95 105 115 50 125 90 50 80 TJ = 25ºC 40 70 30 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 60 200 t f - Nanoseconds 60 I D = 200A, 100A VDS = 20V 400 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 100 td(off) - - - - TJ = 125ºC, VGS = 10V 400 t d(off) - Nanoseconds 70 140 500 tf 110 VDS = 20V TJ = 125ºC t f - Nanoseconds 85 500 td(off) - - - - RG = 1Ω, VGS = 10V 80 120 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 120 100 65 TJ - Degrees Centigrade 90 80 70 20 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 60 100 I D = 100A RG - Ohms 40 120 40 20 3 td(off) - - - - RG = 1Ω, VGS = 10V 120 40 2 200 t d(off) - Nanoseconds 100 t d(on) - Nanoseconds I D = 200A 400 1 180 130 tf 140 120 TJ = 125ºC, VGS = 10V VDS = 20V 160 160 td(on) - - - - t f - Nanoseconds 500 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 600 tr 120 ID - Amperes IXTH500N04T2 IXTT500N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance dfafas 0.300 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_500N04T2(98)12-09-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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