IXTT50P10

Standard Power MOSFET IXTH50P10 IXTT50P10 VDSS ID25 = = ≤ RDS(on) P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 50 A IDM TC = 25°C, pulse width limited by TJM - 200 A IA TC = 25°C - 50 A EAS TC = 25°C 30 mJ PD TC = 25°C 300 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C z 1.13 / 10 Nm/lb.in. z 6 5 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 (TAB) D S TO-268 (IXTT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages JEDEC TO-247 AD Low RDS(ON) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (< 5nH) - easy to drive and to protect Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 μA -100 VGS(th) VDS = VGS, ID = - 250μA - 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 • VDSS VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V - 5.0 V ±100 nA TJ = 125°C z z z z High side switching Push-pull amplifiers DC Choppers Automatic test equipment Advantages - 25 μA -1 mA z 55 mΩ z z Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density DS98905E(6/08) IXTH50P10 IXTT50P10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 22 S 4350 pF 1505 pF 733 pF 46 ns 39 ns 86 ns 38 ns 140 nC 25 nC 85 nC 0.42 °C/W RthJC RthCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 50 A Repetitive, pulse width limited by TJM - 200 A VSD IF = - 25A, VGS = 0V, Note 1 - 3.0 V trr IF = - 25A, di/dt = -100A/μs, VR = - 50V, VGS = 0V 180 TO-247 (IXTH) Outline 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 (IXTT) Outline ns Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH50P10 IXTT50P10 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -50 -140 VGS = -10V VGS = -10V - 9V -45 -120 -40 - 9V I D - Amperes I D - Amperes - 8V -35 -30 - 7V -25 -20 - 6V -15 -100 -80 - 8V -60 - 7V -40 -10 -5 - 6V -20 - 5V 0 - 5V 0 0.0 -0.4 -0.8 -1.2 VD S -1.6 -2.0 0 -2.4 -4 -6 -8 VD Fig. 3. Output Characteristics @ 125ºC -10 S -12 -14 -16 -18 -20 - Volts Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature -50 2.0 VGS = -10V - 9V -45 VGS = - 10V 1.8 -40 - 8V R D S (on) - Normalized I D - Amperes -2 - Volts -35 -30 - 7V -25 -20 - 6V -15 1.6 ID = - 50A 1.4 ID = - 25A 1.2 1.0 -10 0.8 - 5V -5 0.6 0 0.0 -0.5 -1.0 -1.5 -2.0 VD S -2.5 -3.0 -3.5 -50 -4.0 -25 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D -55 2.4 -50 VGS = - 10V 2.2 -45 TJ = 125ºC 2.0 -40 I D - Amperes R D S (on) - Normalized 0 - Volts 1.8 1.6 1.4 -35 -30 -25 -20 -15 1.2 TJ = 25ºC -10 1.0 -5 0.8 0 0 -25 -50 I D -75 - Amperes © 2008 IXYS CORPORATION, All rights reserved -100 -125 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXTH50P10 IXTT50P10 Fig. 7. Input Admittance Fig. 8. Transconductance -150 40 35 g f s - Siemens -125 I D - Amperes TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC -100 -75 -50 30 25ºC 25 125ºC 20 15 10 -25 5 0 0 -4 -5 -6 -7 -8 -9 -10 0 -11 -20 -40 VG S - Volts I -60 -80 -100 - Amperes Fig. 10. Gate Charge Fig. 9. Source Current vs. Source-To-Drain Voltage -150 -10 VDS = - 50V ID = - 25A IG = -1mA -9 -125 -8 -7 -100 VG S - Volts I S - Amperes D -75 -50 TJ = 125ºC -6 -5 -4 -3 TJ = 125ºC -2 -25 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 60 Q VS D - Volts G 80 100 120 140 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10000 1.00 Z (th) J C - (ºC/W) Capacitance - pF C iss C oss 1000 Crss 0.10 f = 1MHz 100 0.01 0 -5 -10 -15 VD -20 S -25 -30 -35 -40 - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_50P10(7B) 6-23-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.