IXTT6N120

IXTH 6N120 IXTT 6N120 High Voltage Power MOSFET VDSS ID25 = 1200 V = 6A = 2.6 Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR 1200 1200 V V ±20 ±30 V V 6 A 24 A TC = 25°C 6 A EAR TC = 25°C 25 mJ EAS TC = 25°C 500 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 (TAB) TO-268 (IXTT) Case Style G 5 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C z 1.13/10 Nm/lb.in. z TJ ≤ 150°C, RG = 2 Ω PD TO-247 AD (IXTH) 6 4 g g G = Gate S = Source Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 1200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5.0 V ±100 nA 25 500 µA µA 2.6 Ω (TAB) S D = Drain TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99024B(01/04) IXTH 6N120 IXTT 6N120 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 5 S 1950 pF 175 pF C rss 60 pF td(on) 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3 tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 ns td(off) RG = 4.7 Ω (External) 42 ns tf 18 ns Qg(on) 56 nC 13 nC 25 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.21 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 6 A ISM Repetitive 24 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V Trr IF = 6A -di/dt = 100 A/µs 850 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 6N120 IXTT 6N120 Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 10 6 VGS = 10V 9V 8V 7V 4 VGS = 10V 9V 8V 7V 8 ID - Amperes ID - Amperes 5 6V 3 2 6 2 5V 1 6V 4 5V 0 0 0 2 4 6 8 10 12 V DS - Volts 14 16 0 5 20 25 30 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 6 3.1 VGS = 10V 9V 8V 7V 6V 4 VGS = 10V 2.8 RDS(on) - Normalized 5 ID - Amperes 15 V DS - Volts Fig. 3. Output Characteristics 3 2 5V 1 2.5 2.2 1.9 ID = 6A 1.6 1.3 ID = 3A 1 0.7 0.4 0 0 5 10 15 20 25 -50 30 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 7 2.8 VGS = 10V 2.5 6 T J = 125ºC 2.2 5 ID - Amperes RDS(on) - Normalized 10 1.9 1.6 T J = 25ºC 1.3 4 3 2 1 1 0 0.7 0 1.5 3 4.5 6 ID - Amperes © 2004 IXYS All rights reserved 7.5 9 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 6N120 IXTT 6N120 Fig. 8. Transconductance 6 12 5 10 4 8 Gfs - Siemens ID - Amperes Fig. 7. Input Admittance T J = -40ºC 25ºC 125ºC 3 2 1 T J = -40ºC 25ºC 125ºC 6 4 2 0 0 3.5 4 4.5 5 5.5 6 6.5 0 V GS - Volts 1.5 4.5 6 7.5 9 ID - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 20 10 16 8 VGS - Volts IS - Amperes 3 12 8 T J = 125ºC 4 VDS = 600V ID = 3A IG = 10mA 6 4 2 T J = 25ºC 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 V SD - Volts 10 20 30 40 50 60 QG - nanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10000 1 C iss 1000 R(th)JC - (ºC/W) Capacitance - pF f = 1M hz C oss 100 0.1 C rss 10 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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