IXTT82N25P

VDSS ID25 IXTT82N25P IXTQ82N25P IXTK82N25P PolarTM Power MOSFET RDS(on) = 250V = 82A  38m  TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V ID25 ILRMS TC = 25C Lead Current Limit 82 75 A A IDM TC = 25C, Pulse Width Limited by TJM 200 A PD TC = 25C 500 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 10.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-3P&TO-264) Weight TO-268 TO-3P TO-264 TO-3P( IXTQ) G D G D S D (Tab) G = Gate S = Source   BVDSS 250 VGS = 0V, ID = 250μA V VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V100 nA IDSS VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 5.0 V 25 A 250 A 38 m    High Power Density Easy to Mount Space Savings Applications      © 2014 IXYS All Rights Reserved Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages VGS(th) RDS(on) 2.5 D = Drain Tab = Drain Features  Characteristic Values Min. Typ. Max. D (Tab) TO-264 (IXTK)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99121F(7/14) IXTT82N25P IXTQ82N25P IXTK82N25P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 52 S 4800 pF 900 pF 210 pF 29 ns 20 ns 78 ns 22 ns 142 nC 32 nC 74 nC 0.25 C/W RthJC RthCS TO-3P Outline TO-3P TO-264 C/W C/W 0.21 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 82 A Repetitive, pulse Width Limited by TJM 328 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IF = 25A, -di/dt = 100A/μs 200 2 VR = 100V TO-264 AA Outline ns C Note 1. Pulse test, t  300s, duty cycle, d 2%. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T TO-268 Outline Terminals: 1 - Gate 3 - Source 2,4 - Drain Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT82N25P IXTQ82N25P IXTK82N25P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 90 200 VGS = 10V 9V 80 70 8V 160 60 9V 140 I D - Amperes I D - Amperes VGS = 10V 180 50 7V 40 120 100 8V 80 30 60 20 7V 40 6V 10 20 5V 6V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 5 10 3.0 VGS = 10V 9V 80 VGS = 10V 2.6 RDS(on) - Normalized 8V 70 60 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 41A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 90 15 VDS - Volts VDS - Volts 7V 50 40 30 6V I D = 82A 2.2 1.8 I D = 41A 1.4 1.0 20 0.6 10 5V 0 0.2 0 1 2 3 4 5 6 7 8 -50 -25 0 VDS - Volts 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Drain Current 80 3.8 External Lead Current Limit 70 VGS = 10V 3.4 60 3.0 TJ = 125ºC I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.6 2.2 1.8 TJ = 25ºC 1.4 50 40 30 20 1.0 10 0.6 0 0 20 40 60 80 100 120 I D - Amperes © 2014 IXYS All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT82N25P IXTQ82N25P IXTK82N25P Fig. 7. Input Admittance Fig. 8. Transconductance 180 80 160 70 TJ = - 40ºC 140 60 25ºC g f s - Siemens I D - Amperes 120 100 80 50 125ºC 40 30 60 TJ = 125ºC 25ºC - 40ºC 40 20 10 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 220 9 140 160 180 VDS = 125V I D = 41A 8 I G = 10mA 180 7 160 VGS - Volts I S - Amperes 120 Fig. 10. Gate Charge 240 200 140 120 100 80 6 5 4 3 TJ = 125ºC 60 2 TJ = 25ºC 40 1 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 20 VSD - Volts 40 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10,000 C iss C oss 1,000 25µs RDS(on) Limit 100 I D - Amperes Capacitance - PicoFarads 100 I D - Amperes 100µs 1ms 10 10ms DC TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTT82N25P IXTQ82N25P IXTK82N25P Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2014 IXYS All Rights Reserved IXYS REF: T_82N25P (7J) 7-16-14-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.