IXTT8P50

IXTH 8P50 IXTT 8P50 Standard Power MOSFET VDSS = -500 V = -8 A ID25 RDS(on) = 1.2 Ω P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C -8 A IDM TC = 25°C, pulse width limited by TJ -32 A IAR TC = 25°C -8 A EAR TC = 25°C 30 mJ PD TC = 25°C 180 W -55 ... +150 °C 150 °C G = Gate, S = Source, -55 ... +150 °C Features 300 °C 250 °C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 5 g g D (TAB) TO-268 (IXTT) G S D (TAB) D = Drain, TAB = Drain • International standard packages • Low R HDMOS process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) TM DS (on) rated • Low package inductance (