IXTU05N100

High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = =  RDS(on) 1000V 750mA  17 N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 750 mA IDM TC = 25C, Pulse Width Limited by TJM 3 A IA TC = 25C 1 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ 150C 3 V/ns PD TC = 25C 40 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.40 0.35 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting force Weight TO-251 TO-252 S D (TAB) TO-252 (IXTY) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features       International Standard Packages Fast Switching Times Avalanche Rated Rds(on) HDMOSTM Process Rugged Polysilicon Gate Cell structure Extended FBSOA Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)  V 4.5 V 100 nA TJ = 125C VGS = 10V, ID = 375mA, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved 25 A 500 A 17   High Power Density Space Savings Applications    Switch-Mode and Resonant-Mode Power Supplies Flyback Inverters DC Choppers DS100102B(9/17) IXTU05N100 IXTY05N100 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 500mA, Note 1 0.55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 47 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 1A Qgd TO-251Outline 0.93 S 260 pF 22 pF 8 pF 11 ns 19 ns 40 ns 28 ns 7.8 nC 1.4 nC 4.1 nC RthJC 1. Gate 3. Source 3.1C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 750 mA ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = IS, -di/dt = 100A/s VR = 100V, VGS = 0V 710 3 A 1.5 V 2.Drain 4. Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 TO-252 AA Outline A A E b3 4 ns L3 c2 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL H 1 - Gate 2,4 - Drain 3 - Source 6.50MIN Note 1: Pulse test, t  300s, duty cycle, d  2%. 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTU05N100 IXTY05N100 o o Fig. 2. Output Characteristics @ TJ = 125 C Fig. 1. Output Characteristics @ TJ = 25 C 0.9 1.4 VGS = 10V 8V 1.2 0.7 7V I D - Amperes I D - Amperes 1.0 6.5V 0.8 VGS = 10V 7V 6V 0.8 0.6 0.6 5.5V 0.5 0.4 0.3 5V 0.4 0.2 6V 0.2 0.1 5V 0.0 0 2.8 2.6 4 8 12 16 20 4.5V 0.0 24 28 0 32 4 8 12 16 20 28 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.35A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.35A Value vs. Drain Current 2.6 VGS = 10V VGS = 10V 2.4 32 o TJ = 125 C 2.4 2.2 2.0 RDS(on) - Normalized 2.2 RDS(on) - Normalized 24 VDS - Volts I D = 0.75A 1.8 1.6 I D = 0.35A 1.4 1.2 1.0 2.0 1.8 1.6 o TJ = 25 C 1.4 1.2 0.8 1.0 0.6 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 1.2 1.4 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 0.8 1.1 1.0 0.7 0.9 0.8 0.5 I D - Amperes I D - Amperes 0.6 0.4 0.3 0.7 0.6 o TJ = 125 C 0.5 o 25 C o - 40 C 0.4 0.3 0.2 0.2 0.1 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2017 IXYS CORPORATION, All Rights Reserved 100 125 150 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTU05N100 IXTY05N100 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 1.6 2.5 o TJ = - 40 C 1.4 2.0 1.2 o 25 C I S - Amperes g f s - Siemens 1.0 o 125 C 0.8 0.6 1.5 1.0 o TJ = 125 C 0.4 o TJ = 25 C 0.5 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 0.4 0.5 I D - Amperes Fig. 9. Gate Charge 0.7 0.8 0.9 Fig. 10. Capacitance 10 1,000 f = 1 MHz VDS = 500V 9 I D = 1A 8 Capacitance - PicoFarads I G = 1mA 7 VGS - Volts 0.6 VSD - Volts 6 5 4 3 Ciss 100 Coss 10 Crss 2 1 1 0 10 1 2 3 4 5 6 7 5 10 15 20 25 30 35 QG - NanoCoulombs VDS - Volts Fig. 11. Forward-Bias Safe Operating Area o @ TC = 25 C Fig. 12. Forward-Bias Safe Operating Area o @ TC = 75 C 10 RDS(on) Limit - Amperes D 1ms 0.1 10ms o TJ = 150 C DC o TC = 25 C Single Pulse 25μs 1 100μs 1ms 0.1 100ms 0.01 40 RDS(on) Limit 100μs 1 I 0 8 I D - Amperes 0 10ms o TJ = 150 C 100ms o TC = 75 C Single Pulse DC 0.01 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTU05N100 IXTY05N100 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - K / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_05N100(1T) 5-13-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.