IXTU2N80P

IXTU2N80P IXTY2N80P IXTA2N80P IXTP2N80P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 800V = 2A  6  TO-251 (IXTU) G D S D (Tab) TE TO-252 (IXTY) G Test Conditions VDSS TJ = 25C to 150C 800 VDGR TJ = 25C to 150C, RGS = 1M 800 VGSS Continuous 30 VGSM Transient 40 ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA TC = 25C EAS TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150°C PD TC = 25C TJM TL TSOLD FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) TO-263 (IXTA) G V 2 A 4 A A mJ 5 V/ns 70 W -55 ... +150 C 150 C -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g TO-251 TO-252 TO-263 TO-220 D (Tab) V 2 Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s O Weight V 100 BS Tstg V O TJ S Maximum Ratings LE Symbol Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 800 VGS(th) VDS = VGS, ID = 50μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 D (Tab) TO-220 (IXTP) GD S G = Gate S = Source      D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages   V D (Tab) Features  V 5.5 S High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  100 nA 5 A 50 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5 6   DS99595F(6/17) IXTU2N80P IXTA2N80P gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 1.4 2.4 S 440 pF 36 pF 4.4 pF 10.6 nC 3.7 nC 4.5 nC 25 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times 35 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 53 RG = 30(External) 28 ns ns ns 1.80 C/W RthJC TO-220 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C/W LE RthCS TE Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IXTY2N80P IXTP2N80P Characteristic Values Min. Typ. Max VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 2A, -di/dt = 100A/μs, VR = 100V O IS A 6 A 1.5 V ns BS 650 2 O Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU2N80P IXTA2N80P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 2.0 3.5 VGS = 10V VGS = 10V 3.0 7V 1.5 6V 2.5 I D - Amperes I D - Amperes IXTY2N80P IXTP2N80P 1.0 6V 2.0 1.5 1.0 5V TE 0.5 0.5 5V 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 VDS - Volts 10 15 20 25 30 VDS - Volts o Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature LE Fig. 3. Output Characteristics @ TJ = 125 C 3.2 2.0 VGS = 10V VGS = 10V 2.8 6V RDS(on) - Normalized 1.5 1.0 O I D - Amperes 5 0.5 0.0 0 BS 5V 4 8 12 16 20 24 2.4 2.0 I D = 1A 1.6 1.2 0.8 0.4 -50 28 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current 3.0 I D = 2A Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 VGS = 10V 2.0 o TJ = 125 C 1.6 I D - Amperes RDS(on) - Normalized O 2.5 2.0 1.5 o TJ = 25 C 1.2 0.8 1.0 0.4 0.0 0.5 0.0 0.5 1.0 1.5 2.0 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTU2N80P IXTA2N80P Fig. 8. Transconductance Fig. 7. Input Admittance 4.0 1.8 VDS = 10V 1.6 o TJ = - 40 C VDS = 10V 3.5 1.4 3.0 1.0 0.8 o TJ = 125 C 25 C 2.5 2.0 o 125 C 1.5 o 25 C o 1.0 - 40 C 0.4 TE 0.6 o g f s - Siemens 1.2 I D - Amperes IXTY2N80P IXTP2N80P 0.5 0.2 0.0 0.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Fig. Thermal Impedance 1 13.2Maximum 3 4Transient 5 6 7 8 9 10 11 I D - Amperes VGS - Volts Fig. 10. Gate Charge LE Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 5.0 9 VDS = 400V I D = 1A 8 4.0 I G = 10mA 2.0 o TJ = 125 C VGS - Volts 3.0 O I S - Amperes 7 o TJ = 25 C 0.0 0.4 BS 1.0 0.5 0.6 0.7 0.8 6 5 4 3 2 1 0 0 0.9 10 VSD - Volts Fig. 11. Capacitance 100 Z(th)JC - K / W Capacitance - PicoFarads Fig. 12. Maximum Transient Thermal Impedance 4 Ciss O 1,000 QG - NanoCoulombs C oss 1 10 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_2N80P(2J) 6-20-17-B IXTU2N80P IXTA2N80P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 2 b2 b A1 4 H 2.85MIN e   0.43 [11.0] e         0.20 [5.0]     0.12 [3.0]  0.10 [2.5] 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.06 [1.6]              O LE TE 1 - Gate 2,4 - Drain 3 - Source O BS TO-251 OUTLINE     0.66 [16.6] 1 - Gate 2,4 - Drain 3 - Source 6.40     L3 c 0.34 [8.7] 4     0 A2 6.50MIN BOTTOM VIEW L2 3   D1 D H   E1 L1 A1 IXTY2N80P IXTP2N80P © 2017 IXYS CORPORATION, All Rights Reserved