IXTU4N70X2

Preliminary Technical Information IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 X2-Class Power MOSFET N-Channel Enhancement Mode VDSS ID25 RDS(on) = 700V = 4A  850m  TO-251 (IXTU) G D S D (Tab) TO-252 (IXTY) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 700 V VDGR TJ = 25C to 150C, RGS = 1M 700 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 4 A IDM TC = 25C, Pulse Width Limited by TJM 8 A IA TC = 25C 2 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 80 W S -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) Weight TO-251 TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 700 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) G D S G = Gate S = Source       100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 High Power Density Easy to Mount Space Savings Applications  5 A 50 A  850 m    © 2018 IXYS CORPORATION, All Rights Reserved International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  V D = Drain Tab = Drain Features V 4.5 D (Tab) Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100779B(6/18) IXTU4N70X2 IXTA4N70X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 2.6 RGi Gate Input Resistance Ciss Coss 4.0 S 13  386 pF 280 pF 1 pF 29 80 pF pF 20 ns 27 ns 66 ns 28 ns 11.8 nC 3.8 nC 3.5 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXTY4N70X2 IXTP4N70X2 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1.56 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 4 A Repetitive, pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 2A, -di/dt = 100A/μs 186 1.3 14.0 VR = 100V ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU4N70X2 IXTA4N70X2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 4.0 12 VGS = 10V 8V 3.5 VGS = 10V 10 8 2.5 2.0 I D - Amperes I D - Amperes 8V 7V 3.0 6V 1.5 7V 6 4 1.0 6V 2 0.5 5V 5V 0.0 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 VDS - Volts 14 16 18 20 22 24 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o 3.5 4.0 VGS = 10V 7V 3.5 12 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C VGS = 10V 3.0 3.0 6V RDS(on) - Normalized I D - Amperes IXTY4N70X2 IXTP4N70X2 2.5 2.0 1.5 5V 1.0 2.5 I D = 4A 2.0 I D = 2A 1.5 1.0 0.5 0.5 4V 0.0 0.0 0 1 4.0 2 3 4 5 6 7 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 3.5 150 1.2 o BVDSS / VGS(th) - Normalized TJ = 125 C RDS(on) - Normalized -50 8 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 1 2 3 4 5 6 7 8 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 9 10 11 12 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTU4N70X2 IXTA4N70X2 IXTY4N70X2 IXTP4N70X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 7 4.5 4.0 6 3.5 5 I D - Amperes I D - Amperes 3.0 2.5 2.0 1.5 4 o TJ = 125 C o 25 C 3 o - 40 C 2 1.0 1 0.5 0 0.0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.5 6.0 6.5 7.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 40 9 8 35 o TJ = - 40 C 7 30 6 I S - Amperes g f s - Siemens 5.0 VGS - Volts TC - Degrees Centigrade o 25 C 5 4 o 125 C 25 20 15 o 3 TJ = 125 C 10 2 o TJ = 25 C 5 1 0 0 0 1 2 3 4 5 6 0.4 7 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 350V VGS - Volts Capacitance - PicoFarads I D = 2A 8 I G = 10mA 6 4 1000 C iss 100 C oss 10 1 2 C rss f = 1 MHz 0.1 0 0 2 4 6 8 10 12 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTU4N70X2 IXTA4N70X2 IXTY4N70X2 IXTP4N70X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 10 7 6 RDS(on) Limit 1 I D - Amperes EOSS - MicroJoules 25μs 5 4 3 100μs 0.1 1ms 2 o TJ = 150 C 10ms o TC = 25 C Single Pulse 1 0 DC 0.01 0 100 200 300 400 500 600 700 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 10 Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N70X2(X1-S602) 1-19-17 IXTU4N70X2 IXTA4N70X2 TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION TO-251 OUTLINE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTY4N70X2 IXTP4N70X2 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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