IXTU5N50P

IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 500V = 5A  1.4  TO-251 (IXTU) G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 5 A IDM TC = 25C, Pulse Width Limited by TJM 10 A IA TC = 25C 5 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 90 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) Weight TO-251 TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 50μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source      D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages   V D (Tab) Features  V 5.5 D (Tab) High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  100 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5 A 25 A 1.4   DS99446G(6/17) IXTU5N50P IXTA5N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 3.0 VDS = 10V, ID = 0.5 • ID25, Note 1 4.7 S 620 pF 72 pF 6.3 pF 12.6 nC 4.3 nC 5.0 nC 22 ns 26 ns 65 ns 24 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) 1.4 C/W RthJC RthCS IXTY5N50P IXTP5N50P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 5 A Repetitive, Pulse Width Limited by TJM 15 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 5A, -di/dt = 100A/μs, VR = 100V 400 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU5N50P IXTA5N50P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 5.0 10 VGS = 10V 7V 4.5 VGS = 10V 7V 9 6V 4.0 8 6V 7 I D - Amperes 3.5 I D - Amperes IXTY5N50P IXTP5N50P 3.0 2.5 2.0 5V 6 5 4 1.5 3 1.0 2 0.5 1 5V 0 0.0 0 1 2 3 4 5 6 7 0 8 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 5.0 3.4 VGS = 10V 7V 4.5 VGS = 10V 3.0 I D - Amperes 3.5 RDS(on) - Normalized 4.0 6V 3.0 2.5 2.0 1.5 2.6 I D = 5A 2.2 I D = 2.5A 1.8 1.4 1.0 1.0 5V 0.6 0.5 0.0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 6 VGS = 10V o TJ = 125 C 5 2.6 4 I D - Amperes RDS(on) - Normalized 3.0 2.2 1.8 2 o TJ = 25 C 1.4 3 1 1.0 0.6 0 0 1 2 3 4 5 6 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTU5N50P IXTA5N50P Fig. 7. Input Admittance IXTY5N50P IXTP5N50P Fig. 8. Transconductance 7 10 o 6 o TJ = 125 C 8 o 25 C o - 40 C 7 g f s - Siemens 5 I D - Amperes TJ = - 40 C 9 4 3 o 25 C 6 5 o 125 C 4 3 2 2 1 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 4 5 6 7 I D - Amperes Fig. 10. Gate Charge 10 VDS = 250V 9 14 I D = 2.5A 8 I G = 10mA 12 V GS - Volts I S - Amperes 7 10 8 6 6 5 4 o TJ = 125 C 3 4 o TJ = 25 C 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 VSD - Volts 8 10 12 Fig. 12. Forward-Bias Safe Operating Area 10 RDS(on) Limit f = 1 MHz 25μs Ciss 1,000 100μs I D - Amperes Capacitance - PicoFarads 6 QG - NanoCoulombs Fig. 11. Capacitance 10,000 4 100 Coss 1ms 1 10ms DC 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTU5N50P IXTA5N50P IXTY5N50P IXTP5N50P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_5N50P(23) 6-19-17-C IXTU5N50P IXTA5N50P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION TO-251 OUTLINE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTY5N50P IXTP5N50P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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