IXTU8N70X2

Preliminary Technical Information IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 X2-Class Power MOSFET N-Channel Enhancement Mode VDSS ID25 RDS(on) = 700V = 8A  500m  TO-251 (IXTU) G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 700 V VDGR TJ = 25C to 150C, RGS = 1M 700 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) Weight TO-251 TO-252 TO-263 TO-220 D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) G D S G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 700   VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 5.0 V 10 A 250 A      © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications  500 m International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  100 nA TJ = 125C   V D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100757B(6/18) IXTU8N70X2 IXTA8N70X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.8 Ciss Coss IXTY8N70X2 IXTP8N70X2 8.0 S 6  800 pF 495 pF 2.2 pF 43 129 pF pF 24 ns 28 ns 53 ns 24 ns 12.0 nC 3.1 nC 4.4 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.83 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 200 1.65 16.3 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU8N70X2 IXTA8N70X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 18 8 VGS = 10V 8V 7 14 6V 7V 12 5 I D - Amperes I D - Amperes VGS = 10V 8V 16 7V 6 4 3 10 8 6 2 6V 4 1 5V 2 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 12 VDS - Volts 20 24 28 32 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature o 8 4.0 VGS = 10V 7V 7 16 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 3.0 RDS(on) - Normalized 6V 5 4 3 VGS = 10V 3.5 6 I D - Amperes IXTY8N70X2 IXTP8N70X2 5V I D = 8A 2.5 2.0 I D = 4A 1.5 1.0 2 0.5 1 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 9 -50 10 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 9 VGS = 10V 4.0 -25 VDS - Volts 125 150 125 150 8 o TJ = 125 C 7 6 3.0 I D - Amperes RDS(on) - Normalized 3.5 2.5 o TJ = 25 C 2.0 1.5 5 4 3 2 1.0 1 0 0.5 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTU8N70X2 IXTA8N70X2 Fig. 7. Input Admittance IXTY8N70X2 IXTP8N70X2 Fig. 8. Transconductance 10 14 o TJ = - 40 C 9 12 8 10 o g f s - Siemens I D - Amperes 7 6 5 o TJ = 125 C 4 o 25 C o - 40 C 3 25 C 8 o 125 C 6 4 2 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 4 VGS - Volts 5 6 7 8 9 10 11 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 25 20 8 15 6 VGS - Volts I S - Amperes VDS = 350V 10 I D = 4A I G = 10mA 4 o TJ = 125 C o TJ = 25 C 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 10 12 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 10 10000 1000 100 8 E OSS - MicroJoules Capacitance - PicoFarads 9 Ciss Coss 10 Crss 1 7 6 5 4 3 2 f = 1 MHz 1 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 400 VDS - Volts 500 600 700 IXTU8N70X2 IXTA8N70X2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 100 1 RDS(on) Limit 10 1s 100ms 10ms 1ms 100μs 25μs Z (th)JC - K / W DC I D - Amperes IXTY8N70X2 IXTP8N70X2 1 0.1 0.1 o TJ = 150 C o TC = 25 C Single Pulse 0.01 1 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: T_8N70X2(X2-R2T5) 6-05-15-A IXTU8N70X2 IXTA8N70X2 TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION TO-251 OUTLINE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTY8N70X2 IXTP8N70X2 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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