IXTV22N60P

PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS (on) = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGS Continuous ±30 V VGSM Tranisent ±40 V ID25 TC = 25° C 22 A IDM TC = 25° C, pulse width limited by TJM 66 A IAR TC = 25° C 22 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque Mounting force Weight TO-3P PLUS220 & PLUS220SMD (TO-3P) (PLUS 220) W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C G V 5.5 V ±100 nA 25 250 µA µA 350 mΩ (TAB) S D D (TAB) S PLUS220SMD (IXTV_S) G S g g Characteristic Values Min. Typ. Max. D PLUS220 (IXTV) 1.13/10 Nm/lb.in. 11...65/2.5...15 N/lb 6 5.0 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) © 2005 IXYS All rights reserved 400 G G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99250E(12/05) IXTQ 22N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 21 S 3600 pF 305 pF Crss 38 pF td(on) 20 ns Ciss Coss 15 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 20 ns td(off) RG = 4 Ω (External) 60 ns tf 23 ns Qg(on) 62 nC 20 nC 25 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd (TO-3P) Source-Drain Diode ° C/W 0.21 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 22 A ISM Repetitive 66 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 22A, -di/dt = 100 A/µs VR = 100V, VGS = 0 V 1.5 V trr QRM TO-3P (IXTQ) Outline 0.31 ° C/W RthJC RthCS IXTV 22N60P IXTV 22N60PS 500 4.0 PLUS220 (IXTV) Outline ns µC PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 22N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 45 22 VGS = 10V 20 VGS = 10V 40 8V 18 9V 8V 35 14 I D - Amperes 16 I D - Amperes IXTV 22N60P IXTV 22N60PS 7.5V 12 10 8 7V 7.5V 30 25 20 7V 15 6 10 4 6V 2 6.5V 5 0 6V 0 0 1 2 3 4 5 6 7 8 9 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics 22 18 21 24 27 30 3.4 VGS = 10V 20 3.1 R D S ( o n ) - Normalized 8V 7V 18 16 I D - Amperes 15 V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 14 6.5V 12 10 8 6V 6 4 5.5V 5V 2 0 0 2 4 6 8 10 12 14 VGS = 10V 2.8 2.5 2.2 I D = 22A 1.9 1.6 I D = 11A 1.3 1 0.7 0.4 16 18 -50 20 -25 V D S - Volts 3 VGS = 10V 2.6 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.8 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 24 TJ = 125º C 20 2.4 I D - Amperes R D S ( o n ) - Normalized 12 2.2 2 1.8 1.6 16 12 8 1.4 1.2 4 TJ = 25º C 1 0.8 0 0 5 10 15 20 25 I D - Amperes © 2005 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 22N60P Fig. 8. Trans conductance 30 27 27 24 24 21 21 - Siemens 30 15 12 TJ = 125 º C 25 º C 6 TJ = -40 º C 25 º C 125 º C 18 15 fs 18 12 g I D - Amperes Fig. 7. Input Adm ittance 9 9 6 -40 º C 3 3 0 0 4.5 5 5.5 6 6.5 7 7.5 8 0 3 6 9 12 V G S - V olts 18 21 24 27 30 Fig. 10. Gate Char ge 10 70 V DS = 300V 9 60 V G S - Volts 50 I S - Amperes 15 I D - A mperes Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 40 30 TJ = 125 º C 8 I D = 11A 7 I G = 10m A 6 5 4 3 20 TJ = 25 º C 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 V S D - V olts 10 20 Q G 30 40 50 60 - nanoCoulombs Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 100 10000 f = 1MH z R DS(on) Lim it C iss 1000 I D - Amperes Capacitance - picoFarads IXTV 22N60P IXTV 22N60PS C oss 100 25µs 100µs 10 1m s 10m s TJ = 150ºC C rs s DC TC = 25ºC 1 10 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pu ls e W id th - millis e c o n d s © 2005 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.