IXTV96N25T

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 96 75 250 A A A IAS EAS TC = 25°C TC = 25°C 5 2 A J PD TC = 25°C 625 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg G V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds 300 260 °C °C Md Mounting torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in. FC Mounting force (PLUS220) 11..65 / 2.5..14.6 N/lb. Weight TO-247 TO-3P PLUS220 6.0 5.5 4.0 g g g D (TAB) S TO-3P (IXTQ) G (TAB) D S PLUS220 (IXTV) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard packages Avalanche rated z Low package inductance - easy to drive and to protect z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. 250 3 V 5 Advantages Easy to mount z Space savings z High power density z V ± 200 nA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 5 μA 250 μA 29 mΩ Applications z z z z z z © 2007 IXYS CORPORATION, All rights reserved DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies DS99863(09/07) IXTH96N25T IXTQ96N25T IXTV96N25T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Typ. 50 82 S 6100 pF 625 pF 75 pF 20 ns 22 ns 59 ns 28 ns 114 nC 33 nC 34 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.5Ω (External) Qg(on) Qgs TO-247AD Outline Min. VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC Max. 0.20 °C/W RthCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 96 A Repetitive, pulse width limited by TJM 300 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 48A, -di/dt = 250 A/μs VR = 100 V,VGS = 0V 158 23 1.8 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline ns A μC Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. PLUS220 (IXTV) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH96N25T IXTQ96N25T IXTV96N25T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 200 VGS = 10V 8V 7V 90 80 160 70 7V 140 ID - Amperes ID - Amperes VGS = 10V 8V 180 60 6V 50 40 120 100 80 30 60 20 40 10 6V 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 3.2 2 4 6 8 10 12 14 16 18 20 22 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 48A Value vs. Junction Temperature 100 24 3.2 VGS = 10V 8V 7V 90 VGS = 10V 2.8 RDS(on) - Normalized 80 ID - Amperes 70 6V 60 50 40 30 5V 2.4 I D = 96A 2.0 I D = 48A 1.6 1.2 20 0.8 10 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 48A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 90 3.4 VGS = 10V External-Lead Current Limit 80 3.0 TJ = 125ºC 60 ID - Amperes RDS(on) - Normalized 70 2.6 2.2 1.8 50 40 30 1.4 20 TJ = 25ºC 1.0 10 0.6 0 0 20 40 60 80 100 120 ID - Amperes © 2007 IXYS CORPORATION, All rights reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTH96N25T IXTQ96N25T IXTV96N25T Fig. 7. Input Admittance Fig. 8. Transconductance 140 130 TJ = - 40ºC 120 120 110 100 TJ = 125ºC 25ºC - 40ºC 80 90 g f s - Siemens ID - Amperes 100 60 25ºC 80 70 60 125ºC 50 40 40 30 20 20 10 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VDS = 125V I D = 25A VGS - Volts IS - Amperes 80 ID - Amperes 120 100 80 TJ = 125ºC I G = 10mA 6 5 4 3 60 TJ = 25ºC 40 2 1 20 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 100 0.10 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH96N25T IXTQ96N25T IXTV96N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 24 24 RG = 2.5Ω 22 22 VGS = 15V TJ = 25ºC 20 I 18 I 16 D D t r - Nanoseconds t r - Nanoseconds VDS = 125V = 96A = 48A 20 RG = 2.5Ω 18 16 14 14 12 12 10 VGS = 15V VDS = 125V TJ = 125ºC 10 25 35 45 55 65 75 85 95 105 115 125 45 50 55 60 65 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 26 I D = 48A, 96A 24 18 23 16 22 14 21 12 20 10 3 4 5 6 7 8 9 tf 30 RG = 2.5Ω, VGS = 15V 66 64 I D = 48A 24 60 20 18 56 16 54 25 35 VGS = 15V 58 20 TJ = 25ºC 56 18 TJ = 125ºC 54 16 75 85 95 105 115 52 125 80 85 ID - Amperes © 2007 IXYS CORPORATION, All rights reserved 90 95 52 100 td(off) - - - - tf 60 60 70 75 160 66 64 22 65 65 140 TJ = 125ºC, VGS = 15V VDS = 125V 50 120 40 100 I D = 48A, 96A 30 80 20 60 10 t d ( o f f ) - Nanoseconds VDS = 125V TJ = 125ºC 60 55 70 t f - Nanoseconds RG = 2.5Ω, 62 55 45 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - 26 50 58 I D = 96A 14 68 45 62 22 TJ - Degrees Centigrade tf 24 68 26 10 32 28 100 70 28 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 25ºC td(off) - - - - 32 RG - Ohms 30 95 VDS = 125V 19 2 90 t d ( o f f ) - Nanoseconds VDS = 125V 20 85 72 25 t f - Nanoseconds TJ = 125ºC, VGS = 15V 80 34 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - tr 75 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 24 22 70 ID - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_96N25T (7W) 08-10-07 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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