IXTX102N65X2

IXTK102N65X2 IXTX102N65X2 X2-Class Power MOSFET VDSS ID25 = = 650V 102A  30m RDS(on)  N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 102 204 A A IA EAS TC = 25C TC = 25C 25 3 A J PD TC = 25C 1040 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264P) FC Mounting Force Weight TO-264P PLUS247 (PLUS247) G D Tab S PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features   International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.0 V 100 nA 25 350 A A High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 30 m DS100655B(4/18) IXTK102N65X2 IXTX102N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 50 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-264P Outline 82 S 0.7  10.9 nF 6100 pF 12.6 pF 367 1420 pF pF E1 A E Q R Q1 D1 D R1 4 1 2 3 L1 D2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS x2 e Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 37 ns 28 ns 67 ns 11 ns 152 nC 57 nC 33 nC RthCS 1 = Gate 2,4 = Drain 3 = Source PLUS247TM Outline Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 408 A VSD IF = IS , VGS = 0V, Note 1 1.4 V QRM A Terminals: C/W 0.15 Source-Drain Diode IRM b2 b 0.12 C/W RthJC trr c b1 450 IF = 51A, -di/dt = 100A/s 11.7 VR = 100V, VGS = 0V 52 ns  μC A Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK102N65X2 IXTX102N65X2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 110 240 VGS = 10V 8V 100 VGS = 10V 90 80 70 I D - Amperes I D - Amperes 200 8V 160 7V 7V 60 6V 50 40 120 80 6V 30 20 40 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 110 3.5 VGS = 10V 7V RDS(on) - Normalized 80 I D - Amperes 25 6V 70 60 50 40 30 VGS = 10V 3.0 90 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 0.5 10 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 100 15 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.5 0 40 80 120 160 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 200 240 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTK102N65X2 IXTX102N65X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 160 110 100 140 90 120 80 I D - Amperes I D - Amperes 70 60 50 40 30 100 o TJ = 125 C 80 o 25 C o - 40 C 60 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 160 300 o TJ = - 40 C 140 250 120 200 I S - Amperes g f s - Siemens o 25 C 100 o 125 C 80 60 150 100 o TJ = 125 C 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V C iss Capacitance - PicoFarads I D = 51A 8 VGS - Volts 1.2 VSD - Volts I G = 10mA 6 4 10,000 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTK102N65X2 IXTX102N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 70 1000 RDS(on) Limit 100 50 I D - Amperes E OSS - MicroJoules 60 40 30 20 25μs 10 100μs 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse 10 0 DC 10ms 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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