IXTX110N20L2

Advance Technical Information IXTK110N20L2 IXTX110N20L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = 200V = 110A Ω < 24mΩ RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 110 A IDM TC = 25°C, Pulse Width Limited by TJM 275 A IA EAS TC = 25°C TC = 25°C 55 5 A J PD TC = 25°C 960 W -55...+150 °C TJM 150 °C Tstg -55...+150 °C TJ TL 1.6mm (0.063 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md FC Mounting Torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.in. N/lb. Weight TO-264 PLUS247 10 6 g g G D (TAB) S PLUS247(IXTX) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS z Applications V 4.5 V VGS = ±20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 50 2.5 μA mA RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 24 mΩ TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density z z z z z Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100195(9/09) IXTK110N20L2 IXTX110N20L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS= 10V, ID = 0.5 • ID25, Note 1 75 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1Ω (External) tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 95 TO-264 (IXTK) Outline S 23 nF 2160 pF 320 pF 40 ns 100 ns 33 ns 135 ns 500 nC 110 nC 182 nC RthJC 0.13 °C/W RthCS 0.15 °C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 200V, ID = 2.88A, TC = 75°C, Tp = 5s 575 W PLUS 247TM (IXTX) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = 55A, VGS = 0V, Note 1 1.35 V trr IRM QRM IF = 55A, -di/dt = 100A/μs, VR = 100V, VGS = 0V Note 420 39 8.3 ns A μC Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK110N20L2 IXTX110N20L2 Fig. 1. Output Characteristics 120 @ T J = 25ºC 280 VGS = 20V 14V 12V 10V 8V 100 VGS = 20V 14V 12V 10V 240 200 80 8V 6.5V ID - Amperes ID - Amperes Fig. 2. Extended Output Characteristics @ T J = 25ºC 6V 60 160 6.5V 120 40 80 6V 5V 20 40 5V 4V 0 4V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 VDS - Volts Fig. 3. Output Characteristics 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature @ T J = 125ºC 3.2 120 VGS = 20V 12V 10V VGS = 10V 2.8 8V 80 R DS(on) - Normalized 100 ID - Amperes 10 VDS - Volts 6V 60 40 5V 2.4 I D = 110A 2.0 I D = 55A 1.6 1.2 20 0.8 4V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 120 4.0 VGS = 10V 3.5 100 TJ = 125ºC 3.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.5 2.0 80 60 40 1.5 TJ = 25ºC 20 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 200 220 240 260 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK110N20L2 IXTX110N20L2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 140 140 TJ = - 40ºC 120 g f s - Siemens ID - Amperes 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 100 25ºC 80 125ºC 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 VGS - Volts 80 100 120 140 160 600 700 800 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 320 16 280 14 240 12 200 10 VGS - Volts IS - Amperes VDS = 100V 160 120 TJ = 125ºC 80 I D = 55A I G = 10mA 8 6 4 TJ = 25ºC 2 40 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 100 VSD - Volts 200 300 400 500 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100,000 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK110N20L2 IXTX110N20L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs 100 100 25µs ID - Amperes ID - Amperes 100µs 1ms 100µs 1ms 10ms 10 10 10ms 100ms DC TJ = 150ºC TJ = 150ºC 100ms DC TC = 75ºC Single Pulse TC = 25ºC Single Pulse 1 1 1 10 100 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 1,000 1 10 100 1,000 VDS - Volts IXYS REF: T_110N20L2(9R)9-16-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.