IXTX120N65X2

Preliminary Technical Information IXTK120N65X2 IXTX120N65X2 X2-Class Power MOSFET VDSS ID25 = = 650V 120A  23m RDS(on)  N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 240 A A IA EAS TC = 25C TC = 25C 15 3.5 A J PD TC = 25C 1250 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264P) FC Mounting Force Weight TO-264P PLUS247 (PLUS247) G D Tab S PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features   International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.0 V 200 nA High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved 25 A 500 A 23 m DS100677B(03/16) IXTK120N65X2 IXTX120N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 66 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264P Outline 110 S 0.77  13.6 nF 9500 pF 8.9 pF 425 1960 pF pF Crss E1 A E Q R Q1 D1 D R1 4 1 2 3 L1 D2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 32 ns 24 ns 87 ns 10 ns 230 nC 74 nC 65 nC RthJC 0.10C/W RthCS 0.15C/W b b2 x2 e Qg(on) Qgs c b1 A Terminals: 1 = Gate 2,4 = Drain 3 = Source PLUS247TM Outline A E A2 Source-Drain Diode D2 R Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 1 VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = IS , VGS = 0V, Note 1 1.4 V QRM IRM 505 IF = 60A, -di/dt = 100A/s 15 VR = 100V, VGS = 0V ns  D1 D IS trr E1 Q μC 58 A 2 4 3 L1 C A1 Terminals: b 3 PLCS b4 b2 2 PLCS e 2 PLCS 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK120N65X2 IXTX120N65X2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 280 VGS = 10V 8V VGS = 10V 8V 240 100 7V 200 7V I D - Amperes I D - Amperes 80 60 6V 160 120 40 80 20 6V 40 5V 5V 0 0 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature 120 20 3.4 VGS = 10V 7V 3.0 VGS = 10V 100 2.6 I D - Amperes RDS(on) - Normalized 6V 80 60 40 2.2 I D = 120A 1.8 I D = 60A 1.4 1.0 5V 20 0.6 4V 0 0.2 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.2 3.5 VGS = 10V 1.1 BV DSS / VGS(th) - Normalized R DS(on) - Normalized 3.0 TJ = 125ºC 2.5 2.0 1.5 TJ = 25ºC 1.0 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 0.5 0.6 0 40 80 120 160 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 200 240 280 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTK120N65X2 IXTX120N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 140 180 160 120 140 100 TJ = 125ºC 25ºC - 40ºC - Amperes 80 100 80 D 60 I I D - Amperes 120 60 40 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 300 200 TJ = - 40ºC 180 250 160 200 - Amperes 25ºC 120 125ºC 100 S 80 150 I g f s - Siemens 140 100 60 TJ = 125ºC 40 50 TJ = 25ºC 20 0 0 0 20 40 60 80 I 100 120 140 160 0.3 180 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VSD - Volts D - Amperes Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 325V Capacitance - PicoFarads I D = 60A 8 V GS - Volts I G = 10mA 6 4 10,000 Ciss 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 40 80 120 160 200 240 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTK120N65X2 IXTX120N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 90 RDS(on) Limit 80 100 25µs 60 I D - Amperes E OSS - MicroJoules 70 50 40 100µs 10 30 1ms 1 20 TJ = 150ºC TC = 25ºC Single Pulse 10 0 10ms 0.1 0 100 200 300 400 10 600 Fig.500 15. Maximum Transient Thermal Impedance VDS - Volts 1 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_120N65X2(X9-S602) 1-06-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.