IXTX120P20T

IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS(on) trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C -120 A IDM TC = 25°C, Pulse Width Limited by TJM - 400 A IA EAS TC = 25°C TC = 25°C -100 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Recitifier z Low RDS(ON) and QG z z Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 200 VGS(th) VDS = VGS, ID = - 250μA - 2.5 V - 4.5 V IGSS VGS = ±15V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V - 25 μA - 300 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved Applications z z z z z z 30 mΩ Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100401B(5/13) IXTK120P20T IXTX120P20T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 85 VDS = -10V, ID = - 60A, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz tr td(off) tf S 73 nF pF 480 pF 90 ns Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 145 2550 Crss td(on) TO-264 AA Outline VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 85 ns 200 ns 50 ns 740 nC 220 nC 120 nC 1 - Gate 2,4 - Drain 3 - Source 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V -120 A ISM Repetitive, Pulse Width Limited by TJM - 480 A VSD IF = -100A, VGS = 0V, Note 1 -1.4 V trr QRM IRM Note IF = - 60A, -di/dt = -100A/μs 3.3 25.6 VR = -100V, VGS = 0V PLUS247TM Outline 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK120P20T IXTX120P20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -120 -300 VGS = -10V - 7V - 6V -100 VGS = -10V - 7V -250 - 6V ID - Amperes ID - Amperes -80 -60 - 5V -200 -150 -40 -100 -20 -50 - 5V - 4V 0 0 0 -0.5 -1 -1.5 -2 -2.5 0 -3 -5 -10 -20 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 60A Value vs. Junction Temperature -120 2.2 VGS = -10V - 7V - 6V -100 VGS = -10V 2.0 -80 R DS(on) - Normalized 1.8 ID - Amperes -15 VDS - Volts - 5V -60 -40 I D = -120A I D = - 60A 1.6 1.4 1.2 1.0 0.8 -20 - 4V 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 60A Value vs. Drain Current VGS = -10V 75 100 125 150 125 150 -120 TJ = 125ºC 1.8 -100 ID - Amperes R DS(on) - Normalized 50 Fig. 6. Maximum Drain Current vs. Case Temperature -140 2.2 2.0 25 TJ - Degrees Centigrade 1.6 1.4 -80 -60 -40 1.2 TJ = 25ºC -20 1.0 0 0.8 0 -40 -80 -120 -160 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK120P20T IXTX120P20T Fig. 8. Transconductance Fig. 7. Input Admittance -200 300 TJ = - 40ºC -180 250 -160 g f s - Siemens ID - Amperes -140 -120 -100 TJ = 125ºC 25ºC - 40ºC -80 -60 25ºC 200 125ºC 150 100 -40 50 -20 0 -3.4 0 -3.8 -4.2 -4.6 -5 -5.4 -5.8 0 -20 -40 -60 -80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -120 -140 -160 -180 -200 -220 Fig. 10. Gate Charge -300 -10 -9 -250 VDS = -100V I D = - 60A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -100 ID - Amperes -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 100 200 300 VSD - Volts 500 600 700 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 -1,000 Ciss f = 1 MHz RDS(on) Limit 10,000 100µs - 100 ID - Amperes Capacitance - PicoFarads 400 QG - NanoCoulombs Coss 1ms -10 1,000 10ms TJ = 150ºC TC = 25ºC Single Pulse Crss 100ms DC -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 - 100 VDS - Volts - 1,000 IXTK120P20T IXTX120P20T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 180 180 RG = 1Ω, VGS = -10V VDS = -100V 160 140 I D t r - Nanoseconds t r - Nanoseconds RG = 1Ω, VGS = -10V VDS = -100V 160 = -120A 120 100 I = - 60A D TJ = 125ºC 140 120 100 TJ = 25ºC 80 80 60 60 25 35 45 55 65 75 85 95 105 115 125 -60 -70 -80 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 350 VDS = -100V 250 200 I D = -120A 300 150 I D = - 60A 200 100 100 50 0 2 3 4 5 6 7 8 9 240 60 220 55 200 I D = - 60A I D = - 120A 50 180 45 160 40 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 80 td(off) - - - - RG = 1Ω, VGS = -10V TJ = 125ºC 60 210 55 200 50 190 TJ = 25ºC 45 180 40 -70 -80 -90 -100 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -110 170 -120 t d(off) - Nanoseconds 220 900 TJ = 125ºC, VGS = -10V 400 800 VDS = -100V 230 65 td(off) - - - - 350 700 I D = - 120A, - 60A 300 600 250 500 200 400 150 300 100 200 50 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = -100V 70 1000 tf 450 240 t f - Nanoseconds tf 75 140 125 500 250 -60 td(off) - - - - RG = 1Ω, VGS = -10V VDS = -100V 0 1 t f - Nanoseconds 65 t d(off) - Nanoseconds 400 -120 260 tf 300 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = -10V 500 -110 70 t f - Nanoseconds tr -100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 700 600 -90 ID - Amperes IXTK120P20T IXTX120P20T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_120P20T(A9) 10-25-11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXTX120P20T IXTK120P20T