IXTX170P10P

IXTK170P10P IXTX170P10P PolarPTM Power MOSFET VDSS ID25 = =  RDS(on) -100V -170A  14m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C (Chip Capability) -170 A ILRMS IDM Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM -160 - 510 A A IA TC = 25C -170 A EAS TC = 25C 3.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 20..120 / 4.5..27 1.13 / 10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force Mounting Forque Weight PLUS247 TO-264 (PLUS247) (TO-264) G D S Tab PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features       International Standard Packages Rugged PolarPTM Process High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V - 4.0 V 100 nA TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved - 50 A - 250 A 14 m  Easy to Mount Space Savings High Power Density Applications      High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99974C(5/17) IXTK170P10P IXTX170P10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 AA Outline 58 S 12.6 nF 4190 pF 930 pF 32 ns 75 ns 82 ns 45 ns Dim. 240 nC 45 nC 120 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T RthJC 0.14C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. -170 A Repetitive, Pulse Width Limited by TJM - 680 A IF = - 85A, VGS = 0V, Note 1 - 3.3 V IF = - 85A, -di/dt = -100A/s VR = - 50V, VGS = 0V 1: 176 ns 1.25 C -14.2 A Pulse test, t  300s, duty cycle, d  2%. Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM Outline Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK170P10P IXTX170P10P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -180 -300 VGS = -15V -10V - 9V -160 -140 - 9V -240 - 8V -210 -100 I D - Amperes -120 I D - Amperes VGS = -15V -10V -270 - 7V -80 - 6V -60 - 8V -180 -150 - 7V -120 -90 -40 - 6V -60 - 5V -20 -30 0 - 5V 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -1 -2 -3 -4 2.2 -180 VGS = -15V -10V - 9V -7 -8 -9 -10 -11 VGS = -10V 2.0 1.8 -120 RDS(on) - Normalized -140 I D - Amperes -6 Fig. 4. RDS(on) Normalized to ID = - 85A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -160 -5 VDS - Volts VDS - Volts - 8V -100 - 7V -80 -60 - 6V -40 I D = -170A 1.6 1.4 I D = - 85A 1.2 1.0 0.8 -20 0.6 - 5V 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0.4 -3.5 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 85A Value vs. Drain Current 2.0 VGS = -10V -15V 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -180 -160 External Lead Current Limit o TJ = 125 C -140 1.6 -120 I D - Amperes RDS(on) - Normalized 1.8 25 TJ - Degrees Centigrade 1.4 1.2 -80 -60 -40 o TJ = 25 C 1.0 -100 -20 0 0.8 0 -40 -80 -120 -160 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK170P10P IXTX170P10P Fig. 8. Transconductance Fig. 7. Input Admittance 100 TJ = - 40 C -120 25 C o 125 C o TJ = - 40 C 90 o -140 o 80 o 25 C 70 g f s - Siemens I D - Amperes -160 -100 -80 -60 60 o 125 C 50 40 30 -40 20 -20 10 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -270 -9 -240 -8 -210 -7 -180 -6 -150 o TJ = 125 C -90 -120 -140 -160 VDS = - 50V I D = - 85A I G = -1mA -5 -4 -3 o TJ = 25 C -60 -2 -30 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 40 VSD - Volts 80 120 160 200 240 QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Forward-Bias Safe Operating Area - 1,000 100μs f = 1 MHz 25μs 1ms RDS(on) Limit 10ms Ciss - 100 10,000 I D - Amperes Capacitance - PicoFarads -100 Fig. 10. Gate Charge -10 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -300 -120 -80 I D - Amperes Coss 1,000 DC, 100ms - 10 TJ = 150ºC Crss TC = 25ºC Single Pulse 100 -1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTK170P10P IXTX170P10P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9)03-25-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.