IXTX20N150

IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 20 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A IA TC = 25°C 10 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 1250 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXTX) G BVDSS VGS = 0V, ID = 1mA 1500 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V 4.5 V ±200 nA 50 µA 750 µA 1 Ω z z Avalanche Rated Fast Intrinsic Diode Guaranteed FBSOA at 75°C Low Package Inductance Advantages z z Easy to Mount Space Savings Applications z z z © 2012 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100424B(11/12) IXTK20N150 IXTX20N150 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 VDS = 30V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 Outline 24 S 7800 pF 487 pF 163 pF 35 ns 30 ns 80 ns 33 ns 215 nC 40 nC 93 nC 0.10 °C/W RthJC RthCS 0.15 °C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 1500V, ID = 133mA, TC = 75°C, tp = 3s 200 W Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, Pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 10A, -di/dt = 100A/µs 1.1 1.8 32 VR = 100V, VGS = 0V µs µC A Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Note: Millimeter Min. Max. A A1 A2 b b1 b2 C D E e L L1 Q R 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK20N150 IXTX20N150 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 16 30 VGS = 10V VGS = 10V 6V 14 25 12 6V 5V ID - Amperes ID - Amperes 20 15 10 8 6 10 4 5V 5 2 4V 4V 0 0 0 5 10 15 20 25 30 0 5 10 VDS - Volts 15 20 25 30 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Drain Current 3.0 2.6 VGS = 10V VGS = 10V 2.4 2.6 TJ = 125ºC R DS(on) - Normalized R DS(on) - Normalized 2.2 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.6 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 4 8 12 16 20 24 28 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 28 22 20 24 18 20 14 ID - Amperes ID - Amperes 16 12 10 8 16 12 TJ = 125ºC 8 6 4 25ºC - 40ºC 4 2 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved 100 125 150 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXTK20N150 IXTX20N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 60 40 TJ = - 40ºC 35 50 25ºC 40 25 IS - Amperes g f s - Siemens 30 125ºC 20 15 30 20 TJ = 125ºC 10 TJ = 25ºC 10 5 0 0 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 ID - Amperes Fig. 9. Gate Charge 0.8 0.9 1.0 Fig. 10. Capacitance 10 100,000 VDS = 750V f = 1 MHz Capacitance - PicoFarads I D = 10A 8 VGS - Volts 0.7 VSD - Volts I G = 10mA 6 4 Ciss 10,000 1,000 Coss 100 Crss 2 10 0 0 20 40 60 80 100 120 140 160 180 200 0 220 5 10 15 20 25 30 35 QG - NanoCoulombs VDS - Volts Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Forward-Bias Safe Operating Area 40 @ T C = 75ºC @ T C = 25ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 100µs 100µs 10 ID - Amperes ID - Amperes 10 1ms 1 1 10ms TJ = 150ºC 1ms 10ms TJ = 150ºC 100ms TC = 25ºC Single Pulse TC = 75ºC Single Pulse DC 100ms DC 0.1 0.1 10 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTK20N150 IXTX20N150 Fig. 12. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_20N150(9P)12-13-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.