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IXTX400N15X4

IXTX400N15X4

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO247-3

  • 描述:

    MOSFET N-CH 150V 400A PLUS247

  • 数据手册
  • 价格&库存
IXTX400N15X4 数据手册
IXTK400N15X4 IXTX400N15X4 X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = RDS(on)  150V 400A  3.1m D G TO-264P (IXTK) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 150 150 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 400 160 900 A A A IA EAS TC = 25C TC = 25C 200 3 A J PD TC = 25C 1500 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +175 175 -55 ... +175 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force (PLUS247) Weight TO-264 PLUS247 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g G D D (Tab) S PLUS247 (IXTX) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 V Applications 4.5 V  200 nA 25 A 2 mA TJ = 150C © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 2.4 3.1 m Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls DS100905B(11/19) IXTK400N15X4 IXTX400N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 100 Ciss Coss 170 S 1.2  14.5 nF 3.1 nF 8.0 pF 2500 9400 pF pF 40 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 22 ns 180 ns 8 ns 430 nC 100 nC 100 nC RthJC 0.10C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A , VGS = 0V, Note 1 trr QRM IRM 400 A 1600 A 1.4 V 175 IF = 150A, -di/dt = 100A/s 1.1 VR = 100V, VGS = 0V 12.3 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK400N15X4 IXTX400N15X4 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 400 1000 VGS = 10V 8V 350 VGS = 10V 900 8V 800 7V 300 9V I D - Amperes I D - Amperes 700 250 200 6V 150 7V 600 500 400 300 6V 100 200 50 5V 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 VDS - Volts 2.4 400 VGS = 10V 8V 7 8 9 10 VGS = 10V 2.2 7V 2.0 250 RDS(on) - Normalized 300 I D - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 200A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 350 5 VDS - Volts 6V 200 150 5V 100 1.8 I D = 400A 1.6 I D = 200A 1.4 1.2 1.0 50 0.8 4V 0.6 0 0 2.6 2.4 0.4 0.8 1.2 1.6 2 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 200A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 2.0 BVDSS / VGS(th) - Normalized 2.2 RDS(on) - Normalized -50 2.4 o TJ = 150 C 1.8 1.6 1.4 o 1.2 TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.8 0.5 0.6 0 100 200 300 400 500 600 700 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 800 900 1000 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTK400N15X4 IXTX400N15X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 400 180 160 140 300 I D - Amperes 120 I D - Amperes VDS = 10V 350 External Lead Current Limit 100 80 60 250 o TJ = 150 C 200 o 25 C o - 40 C 150 100 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 500 800 o VDS = 10V 450 TJ = - 40 C 700 400 600 o TJ = 25 C o 25 C 300 I S - Amperes g f s - Siemens 350 250 o 150 C 200 500 o TJ = 150 C 400 300 150 200 100 100 50 0 0 0 50 100 150 200 250 300 350 400 0.2 450 0.4 0.6 0.8 1.0 1.4 1.6 1.8 2.0 2.2 2.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 75V Capacitance - PicoFarads I D = 200A 8 I G = 10mA 7 VGS - Volts 1.2 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 Coss 1,000 Crss 100 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTK400N15X4 IXTX400N15X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 28 1000 RDS(on) Limit 25μs 24 100μs 100 External Lead Limit I D - Amperes E OSS - MicroJoules 20 16 12 1ms 10 8 o TJ = 175 C o TC = 25 C Single Pulse 4 1 0 10ms DC Fig. 15. Maximum Transient Thermal Impedance 1 0 20 40 60 80 100 120 140 1 10 100 100ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_400N15X4 (191) 6-19-18 IXTK400N15X4 IXTX400N15X4 PLUS247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTK400N15X4 IXTX400N15X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved
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