IXTX550N055T2

Advance Technical Information IXTK550N055T2 IXTX550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.6mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ VGSS VGSM G 55 55 V V Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 550 160 1375 A A A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) D Tab S PLUS247 (IXTX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 55 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 4.0 ± 200 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved z Easy to Mount Space Savings High Power Density V Applications V z z nA 10 μA 1 mA z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 1.6 mΩ DS100217(11/09) IXTK550N055T2 IXTX550N055T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 TO-264 (IXTK) Outline 150 S 40 nF 4970 pF 1020 pF 1.36 Ω 45 ns 40 ns 90 ns tf 230 ns Qg(on) 595 nC 150 nC 163 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) Qgs Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 100A, VGS = 0V QRM -di/dt = 100A/μs VR = 27.5V 550 A 1700 A 1.2 V 100 5 ns A 250 nC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ADVANCE TECHNICAL INFORMATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. PLUS 247TM (IXTX) Outline Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK550N055T2 IXTX550N055T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 400 350 VGS = 15V 10V 8V 250 ID - Amperes VGS = 15V 350 200 150 7V 300 6V 250 ID - Amperes 300 5V 10V 8V 7V 6V 200 150 5V 100 100 50 50 4V 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 VDS - Volts 2.5 2.0 VGS = 15V 10V 8V 7V 300 VGS = 10V 1.8 R DS(on) - Normalized 250 ID - Amperes 2.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 350 6V 200 150 5V 100 4V 50 I D < 550A 1.6 1.4 1.2 1.0 0.8 0.6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 1.0 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. Normalized RDS(on) vs. Drain Current 180 2.0 160 External Lead Current Limit 1.8 140 TJ = 175ºC 120 1.6 ID - Amperes R DS(on) - Normalized 1.5 VDS - Volts VGS = 10V 15V 1.4 100 80 60 1.2 TJ = 25ºC 40 1.0 20 0 0.8 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTK550N055T2 IXTX550N055T2 Fig. 8. Transconductance Fig. 7. Input Admittance 300 300 TJ = - 40ºC 250 250 ID - Amperes g f s - Siemens TJ = 150ºC 25ºC - 40ºC 200 150 100 25ºC 200 150ºC 150 100 50 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 50 100 150 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 500 600 Fig. 10. Gate Charge VDS = 27.5V 9 I D = 275A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 250 10 350 200 150 TJ = 150ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 VSD - Volts 300 400 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100.0 RDS(on) Limit Ciss 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads 200 ID - Amperes Coss 100µs External Lead Limit 100 1ms 1.0 Crss 10 10ms TJ = 175ºC 100ms TC = 25ºC f = 1 MHz DC Single Pulse 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100 IXTK550N055T2 IXTX550N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 48 48 RG = 1Ω , VGS = 10V 46 VDS = 27.5V 44 t r - Nanoseconds 44 t r - Nanoseconds RG = 1Ω , VGS = 10V 46 VDS = 27.5V 42 I 40 D = 200A 38 36 I D TJ = 125ºC 42 40 38 TJ = 25ºC 36 = 100A 34 34 32 32 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 105 75 I D = 200A 200 60 I D = 100A 45 100 30 50 15 0 2 2.5 3 3.5 4 4.5 120 I D = 200A 150 110 I D = 100A 100 100 50 90 0 25 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - RG = 1Ω, VGS = 10V 120 TJ = 25ºC 150 100 100 80 TJ = 125ºC 50 80 100 VDS = 27.5V 400 I D = 200A, 100A 300 300 200 200 100 100 60 0 60 td(off) - - - - TJ = 125ºC, VGS = 10V 400 t d(off) - Nanoseconds 200 tf 160 140 TJ = 125ºC 500 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 40 200 0 0 1 1.5 2 2.5 3 RG - Ohms 3.5 4 4.5 5 t d(off) - Nanoseconds VDS = 27.5V 250 80 125 500 t f - Nanoseconds tf 300 t f - Nanoseconds 200 5 180 40 130 RG - Ohms 350 140 RG = 1Ω, VGS = 10V 250 0 1.5 td(off) - - - - VDS = 27.5V t f - Nanoseconds 250 1 200 150 tf 300 90 150 180 t d(off) - Nanoseconds VDS = 27.5V t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 300 160 350 120 350 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 400 tr 120 ID - Amperes IXTK550N055T2 IXTX550N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:T_550N055T2(V9)12-07-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.