IXTX5N250

Advance Technical Information IXTK5N250 IXTX5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 5 A IDM TC = 25°C, Pulse Width Limited by TJM 20 A IA TC = 25°C 2.5 A EAS TC = 25°C 2.5 J PD TC = 25°C 960 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 260 °C °C TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g G D S Tab PLUS247 (IXTX) G Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D Avalanche Rated Fast Intrinsic Diode Guaranteed FBSOA at 75°C Low Package Inductance Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 2500 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = 2kV, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V 5.0 V ±200 nA 50 μA 4 mA 8.8 Ω Advantages z z Applications z z z © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100280(08/10) IXTK5N250 IXTX5N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.0 VDS = 50V, ID = 0.5 • ID25, Note 1 4.5 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 1000V, ID = 0.5 • ID25 Qgd TO-264 Outline 6.0 S 8560 pF 315 pF 90 pF 33 ns 20 ns 90 ns 44 ns 200 nC 28 nC 70 nC 0.13 °C/W RthJC RthCS °C/W 0.15 Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 2000V, ID = 0.11A, TC = 75°C, tp = 3s 220 W Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 2.5A, -di/dt = 100A/μs, VR = 100V 1.2 5 A 20 A 1.5 V μs Terminals: 1 - Gate 2 - Drain 3 - Source Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK5N250 IXTX5N250 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 2.5 5 4.5 VGS = 10V 5V 4V ID - Amperes 3.5 ID - Amperes VGS = 10V 2 4 3 2.5 2 1.5 1 4V 1.5 1 3V 0.5 0.5 3V 0 0 0 5 10 15 20 25 30 35 0 5 10 15 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature 25 30 35 Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current 3.0 2.6 VGS = 10V VGS = 10V 2.4 2.6 2.2 2.2 R DS(on) - Normalized R DS(on) - Normalized 20 VDS - Volts 1.8 I D = 5A 1.4 I D = 2.5A 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 1.2 TJ = 25ºC 0.6 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 5 6 4.5 5 4 3.5 ID - Amperes ID - Amperes 4 3 2 TJ = 125ºC 3 25ºC 2.5 - 40ºC 2 1.5 1 1 0.5 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved 100 125 150 2.0 2.5 3.0 3.5 VGS - Volts 4.0 4.5 5.0 IXTK5N250 IXTX5N250 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 16 8 7 14 TJ = - 40ºC g f s - Siemens 6 12 IS - Amperes 5 25ºC 4 125ºC 3 10 8 6 2 4 1 2 0 TJ = 125ºC TJ = 25ºC 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.2 0.3 0.4 0.5 ID - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10 100,000 VDS = 1000V f = 1 MHz Capacitance - PicoFarads I D = 2.5A 8 VGS - Volts 0.6 I G = 10mA 6 4 Ciss 10,000 1,000 Coss 100 2 Crss 10 0 0 20 40 60 80 100 120 140 160 180 200 0 220 5 15 20 25 30 35 40 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 100µs 10 ID - Amperes ID - Amperes 10 1ms 1 100µs 1ms 1 10ms 10ms TJ = 150ºC TJ = 150ºC 100ms TC = 25ºC Single Pulse 0.1 100 10 VDS - Volts QG - NanoCoulombs TC = 75ºC Single Pulse DC 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 100 100ms DC 1,000 VDS - Volts 10,000 IXTK5N250 IXTX5N250 Fig. 12. Maximum Transient Thermal Impedance 1.000 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_5N250(9P)8-13-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.