IXTX60N50L2

IXTK60N50L2 IXTX60N50L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = 500V = 60A  < 100m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) G D S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 60 A IDM TC = 25C, pulse width limited by TJM 150 A IA EAS TC = 25C TC = 25C 60 3 A J PD TC = 25C 960 W TJ -55...+150  TJM 150  C -55...+150  C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting torque (IXTK) Mounting Force (IXTX) Weight TO-264 PLUS247 300 260 °C °C 1.13/10 20..120 / 4.5..27 Nm/lb.in N/lb 10 6 G D Tab S G = Gate S = Source D = Drain Tab = Drain C Tstg TL TSOLD PLUS247 (IXTX) g g Features     Designed for linear operation International standard packages Avalanche rated Guaranteed FBSOA at 75C Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved. V 4.5 V 200 nA 50  A 5 mA 100  Easy to mount  Space savings  High power density Applications      Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators m DS100087A(5/15) IXTK60N50L2 IXTX60N50L2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS= 10V, ID = 0.5 • ID25, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 0.5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 32 S 24 nF 1325 pF 172 pF 40 ns 40 ns 165 ns 38 ns 610 nC 130 nC 365 nC RthJC TO-264 (IXTK) Outline Terminals: 1 - Gate 2,4 - Drain 3 - Source 0.13 C/W RthCS 0.15      C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 400V, ID = 1.1A, TC = 75C, tp = 3s 440 W PLUS 247TM (IXTX) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 60 A Repetitive, pulse width limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 60A, -di/dt = 100A/s, VR = 100V, VGS = 0V 980 73 35.8 ns A μC Terminals: Dim. Notes: 1. Pulse test, t  300s, duty cycle, d  2%. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain 3 - Source Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK60N50L2 IXTX60N50L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 60 160 VGS = 20V 14V 12V 10V 9V 120 40 I D - Amperes I D - Amperes 50 VGS = 20V 14V 12V 140 8V 30 7V 20 10V 100 9V 80 60 8V 40 10 7V 6V 20 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6V 0 4.5 5.0 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 60 2.8 VGS = 20V 12V 10V 9V VGS = 10V 2.4 RDS(on) - Normalized 50 I D - Amperes 15 VDS - Volts 8V 40 30 7V 20 2.0 I D = 60A I D = 30A 1.6 1.2 6V 10 0.8 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 VGS = 10V 20V 60 TJ = 125ºC ---- 50 I D - Amperes RDS(on) - Normalized 2.4 2.0 1.6 TJ = 25ºC 40 30 20 1.2 10 0.8 0 0 20 40 60 80 100 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved. 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK60N50L2 IXTX60N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 TJ = - 40ºC 50 90 80 60 g f s - Siemens I D - Amperes 25ºC 40 70 TJ = 125ºC 25ºC - 40ºC 50 40 125ºC 30 20 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 110 Fig. 10. Gate Charge 16 200 VDS = 250V 14 I D = 30A 160 I G = 10mA VGS - Volts 12 I S - Amperes 50 I D - Amperes 120 80 TJ = 125ºC 8 6 4 TJ = 25ºC 40 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 100 200 VSD - Volts 300 400 500 600 700 800 900 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 0.01 1,000 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK60N50L2 IXTX60N50L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 75ºC @ TC = 25ºC 1000 1000 RDS(on) Limit RDS(on) Limit 100 100 25µs 100µs I D - A m p e re s I D - A m p e re s 25µs 1ms 10 10ms 100µs 10 1ms 10ms 100ms 1 100ms DC TJ = 150ºC 1 TJ = 150ºC TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 0.1 0.1 10 100 VDS - Volts © 2015 IXYS CORPORATION, All Rights Reserved. 1000 10 100 1000 VDS - Volts IXYS REF: T_60N50L2(9R)12-08-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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