IXTX6N200P3HV

Advance Technical Information IXTX6N200P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 2000V = 6A   4.0 N-Channel Enhancement Mode TO-247PLUS-HV Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 2000 V VDGR TJ = 25C to 150C, RGS = 1M 2000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM PD TC = 25C TJ TJM Tstg 6 A 18 A 960 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 20..120 / 4.5..27 Nm/lb.in 6 g G S D G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force Weight D = Drain Tab = Drain Features  TL TSOLD D (Tab)  High Blocking Voltage High Voltage Package Advantages    Easy to Mount Space Savings High Power Density Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 2000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 3A, Note 1    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems V 5.0 V 100 nA TJ = 100C © 2016 IXYS CORPORATION, All Rights Reserved 150 25 A A 4.0  DS100709(02/16) IXTX6N200P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 4.5 VDS = 30V, ID = 3A, Note 1 Ciss Coss 7.5 S 3700 pF VGS = 0V, VDS = 25V, f = 1MHz 236 pF 104 pF 2.5  28 ns 22 ns 80 ns 46 ns 143 nC 21 nC 70 nC 0.15 0.13 C/W C/W Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 6 A Repetitive, pulse Width Limited by TJM 24 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 3A, -di/dt = 100A/μs Note: 520 580 2.2 VR = 100V ns nC A 1. Pulse test, t  300s, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTX6N200P3HV Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 4.0 9 VGS = 10V 8 3.5 VGS = 10V 6V 7 3.0 7V I D - Amperes I D - Amperes 6 5 6V 4 2.5 2.0 1.5 5V 3 1.0 2 5.5V 0.5 1 5V 4V 0 0.0 0 3.4 3 6 9 12 15 18 21 24 27 30 0 33 6 9 12 15 18 21 24 27 30 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Drain Current 33 2.8 VGS = 10V 2.6 VGS = 10V 3.0 3 VDS - Volts TJ = 125ºC 2.4 R DS(on) - Normalized R DS(on) - Normalized 2.6 2.2 I D = 6A 1.8 I D = 3A 1.4 2.2 2.0 1.8 1.6 1.4 1.0 TJ = 25ºC 1.2 0.6 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 I D - Amperes TJ - Degrees Centigrade Fig. 6. Input Admittance Fig. 5. Maximum Drain Current vs. Case Temperature 6.0 7 6 5.0 4.0 I D - Amperes I D - Amperes 5 4 3 3.0 TJ = 125ºC 25ºC - 40ºC 2.0 2 1.0 1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2016 IXYS CORPORATION, All Rights Reserved 100 125 150 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTX6N200P3HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 14 20 TJ = - 40ºC 18 12 16 25ºC 14 I S - Amperes g f s - Siemens 10 8 125ºC 6 12 10 TJ = 125ºC 8 TJ = 25ºC 6 4 4 2 2 0 0 0 1 2 3 4 5 6 7 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10,000 10 VDS = 1000V Capacitance - PicoFarads I D = 3A 8 V GS - Volts I G = 10mA 6 4 2 Ciss 1,000 Coss 100 Crss 1 f = 1 MHz Fig. 12. Maximum Transient Thermal Impedance 10 0 0 20 40 60 80 100 120 0 140 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 12 Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area aaaa 0.2 100 RDS(on) Limit 0.1 25µs 100µs Z(th)JC - K / W ID - Amperes 10 1ms 1 10ms 100ms 0.1 TJ = 150ºC DC TC = 25ºC Single Pulse 0.01 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTX6N200P3HV TO-247PLUS HV OUTLINE A A E R E1 A2 Q D1 D 4 D2 1 2 3 L1 D3 e e1 A3 2X E2 A1 E3 4X C b b1 3X 3X PINS: 1 - Gate 2 - Source 3,4 - Drain © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N200P3HV(H8-653) 2-22-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.