IXTX8N150L

IXTK8N150L IXTX8N150L LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 = 1500V = 8A < 3.6 RDS(on) D N-Channel Enhancement Mode Guaranteed FBSOA G TO-264 (IXTK) S G D S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 8 20 A A PD TC = 25C 700 W -55 to +150  C TJM 150  C Tstg -55 to +150  C TJ TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force (PLUS247) Weight 300 °C 1.13/10 Nm/lb.in 20..120 /4.5..27 TO-264 PLUS247 N/lb 10 6 g g PLUS247 (IXTX) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1500 VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 • ID25 , Note 1 5.0 TJ = 125C Features      8.0 V 200 nA  50 A 3 mA     Designed for Linear Operations International Standard Packages Guaranteed FBSOA at 60C Molding Epoxies Meet UL94 V-0 Flammability Classification Programmable Loads Current Regulators DC-DC Convertors Battery Chargers DC Choppers Temperature and Lighting Controls Advantages    © 2021 Littelfuse, Inc. D = Drain Tab = Drain Applications V 3.6 Tab S G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Easy to Mount Space Savings High Power Density DS99616C(2/21) IXTK8N150L IXTX8N150L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.4 VDS = 50V, ID = 0.5 • ID25, Note 1 Ciss Coss 2.3 tr td(off) tf 405 pF 70 pF 36 ns 18 ns 90 ns 95 ns VGS = 0V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs S pF Crss td(on) 3.2 8000 VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 250 nC 80 nC 116 RthJC nC 0.18 C/W RthCS 0.15      C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 1kV, ID = 0.5A, TC = 60C, TP = 3s 500 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 8 A Repetitive, Pulse Width Limited by TJM 32 A VSD IF = 8A, VGS = 0V, Note 1 1.2 V trr IF = IS, -di/dt =100A/s, VR = 100V 1700 ns Note: 1. Pulse Test, t  300s; Duty Cycle, d  2%. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTK8N150L IXTX8N150L Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Extended Output Characteristics @ TJ = 25ºC 10 V GS = 20V 8 14V VGS = 20V 7 6 12V I D - Amperes I D - Amperes 8 6 12V 4 5 4 3 10V 2 2 0 0 4 8 12 16 20 10V 1 9V 0 24 28 9V 8V 0 32 5 10 15 20 Fig. 3. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature 30 35 40 50 2.4 VGS = 20V 2.2 2.4 TJ = 125ºC 2.0 RDS(on) - Normalized I D = 8A 2.0 I D = 4A 1.6 1.2 1.8 VGS = 20V 1.6 1.4 1.2 0.8 TJ = 25ºC 1.0 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 TJ - Degrees Centigrade 6 7 8 9 10 11 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 9 9 8 8 7 7 6 6 ID - Amperes ID - Amperes 45 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Drain Current 2.8 RDS(on) - Normalized 25 VDS - Volts VDS - Volts 5 4 TJ = 125ºC 25ºC - 40ºC 5 4 3 3 2 2 1 1 0 VDS = 50V 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2021 Littelfuse, Inc. 100 125 150 6 7 8 9 10 VGS - Volts 11 12 13 14 IXTK8N150L IXTX8N150L Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 4.5 28 TJ = - 40ºC V DS = 50V 4.0 24 3.5 I S - Amperes g f s - Siemens 20 25ºC 3.0 125ºC 2.5 2.0 1.5 16 12 TJ = 125ºC 8 TJ = 25ºC 1.0 4 0.5 0 0.0 0 1 2 3 4 5 6 7 8 0.4 9 0.5 0.6 0.7 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 20 100,000 f = 1 MHz Capacitance - PicoFarads V DS = 750V I D = 4A I G = 10mA 15 VGS - Volts 0.8 VSD - Volts I D - Amperes 10 5 Ciss 10,000 1,000 Coss 100 Crss 0 10 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXTK8N150L IXTX8N150L Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 13. Forward-Bias Safe Operating Area @ TC = 60ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 10 10 1ms 10ms 1 25µs I D - Amperes I D - Amperes 100µs 100µs 1ms 10ms 1 100ms 100ms DC TJ = 150ºC TC = 60ºC Single Pulse TJ = 150ºC TC = 25ºC Single Pulse 0.1 10 100 1,000 VDS - Volts © 2021 Littelfuse, Inc. 10,000 DC 0.1 10 100 1,000 10,000 VDS - Volts IXYS REF: T_8N150L (8N) 2-25-21 IXTK8N150L IXTX8N150L TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source Littelfuse reserves the right to change limits, test conditions, and dimensions. IXTK8N150L IXTX8N150L Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.