IXTY01N100

High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS ID25 = =  RDS(on) 1000V 100mA  80 N-Channel Enhancement Mode TO-251 (IXTU) G D Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 100 mA IDM TC = 25C, Pulse Width Limited by TJM 400 mA PD TC = 25C 25 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.40 0.35 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting force Weight TO-251 TO-252 Maximum Ratings S D (Tab) TO-252 (IXTY) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features      International Standard Packages Fast Switching Times Avalanche Rated Rds(on) HDMOSTM Process Rugged Polysilicon Gate Cell structure Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 25A 1000 VGS(th) VDS = VGS, ID = 25A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 50mA, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved   V 4.5 10 A 200 A 80 Applications V 50 nA 60 High Power Density Space Savings     Level Shifting Triggers Solid State Relays Current Regulators  DS98812E(9/17) IXTU01N100 IXTY01N100 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 50mA, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA RG = 50 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA Qgd TO-251 Outline 0.16 S 54.0 pF 6.9 pF 2.0 pF 12 ns 12 ns 40 28 ns ns 6.9 nC 1.8 nC 3.0 nC RthJC 1. Gate 3. Source 5C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 mA ISM Repetitive, Pulse Width Limited by TJM 300 mA VSD IF = IS, VGS = 0V, Note 1 1.8 V trr IF = 0.75A, -di/dt = 100A/μs, VR = 25V 1.5 μs 2.Drain 4. Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 TO-252 AA Outline A A E b3 4 L3 c2 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL H 1 - Gate 2,4 - Drain 3 - Source 6.50MIN Note 1: Pulse test, t  300s, duty cycle, d  2%. 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTU01N100 IXTY01N100 o o Fig. 2. ExtendedOutput Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 500 200 VGS = 10V 180 6V 400 140 I D - MilliAmperes I D - MilliAmperes 160 120 100 80 60 VGS = 10V 450 6V 350 300 250 200 150 5V 40 100 20 50 5V 0 0 0 2 4 6 8 10 12 0 14 5 10 15 20 3.0 200 VGS = 10V 35 40 45 50 VGS = 10V 2.6 6V 160 140 RDS(on) - Normalized I D - MilliAmperes 30 Fig. 3. RDS(on) Normalized to ID = 50mA Value vs. Junction Temperature o Fig. 2. Output Characteristics @ TJ = 125 C 180 25 VDS - Volts VDS - Volts 120 5V 100 80 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 0.6 20 0.2 0 0 5 10 15 20 25 -50 30 -25 0 Fig. 4. RDS(on) Normalized to ID = 50mA Value vs. Drain Current 3.0 VGS = 10V 75 100 125 150 Fig. 5. Maximum Drain Current vs. Case Temperature o 100 I D - MilliAmperes RDS(on) - Normalized 50 120 TJ = 125 C 2.6 25 TJ - Degrees Centigrade VDS - Volts 2.2 o TJ = 25 C 1.8 1.4 80 60 40 20 1.0 0 0.6 0 50 100 150 200 250 300 350 I D - MilliAmperes © 2017 IXYS CORPORATION, All Rights Reserved 400 450 500 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTU01N100 IXTY01N100 Fig. 7. Input Admittance Fig. 8. Transconductance 160 o 350 140 TJ = - 40 C VDS = 10V VDS = 10V 300 o 25 C 250 100 g f s - Siemens I D - MilliAmperes 120 80 60 o TJ = 125 C o TJ = 25 C 40 200 o 125 C 150 100 50 20 0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 0 20 40 60 VGS - Volts 120 140 160 6 7 8 10 VDS = 500V 9 350 I D = 50mA 8 300 I G = 1mA 7 250 V GS - Volts I S - MilliAmperes 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 400 200 150 o TJ = 125 C 6 5 4 3 o TJ = 25 C 100 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 1 2 3 4 5 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100 10 Ciss 10 Z (th)JC - K / W Capacitance - PicoFarads 80 I D - MilliAmperes Coss 1 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_01N100(1N) 8-18-05-A