IXTY12N06TTRL

Preliminary Technical Information IXTU12N06T IXTY12N06T TrenchMVTM Power MOSFET VDSS ID25 = 60V = 12A Ω ≤ 85mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ VGSM Transient ID25 IDM ILRMS G D 60 60 V V ±20 V TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 12 30 25 A A A IAR EAS TC = 25°C TC = 25°C 3 20 A mJ PD TC = 25°C 33 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 0.40 0.35 g g z TJ TJM Tstg TL TSOLD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Mounting torque Weight TO-251 TO-252 D (TAB) S TO-252 (IXTY) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features z z Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 60 VGS(th) VDS = VGS, ID = 25μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 z V 4.0 V Applications z ± 50 nA TJ = 150°C 1 μA 100 μA 85 mΩ z z z 2008 IXYS CORPORATION All rights reserved Easy to mount Space savings High power density Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99947(4/08) IXTU12N06T IXTY12N06T Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Notes 1 2.9 VGS = 0V, VDS = 25V, f = 1MHz 4.7 S 256 46 10.4 pF pF pF 12 29 29 18 ns ns ns ns 3.4 1.0 0.9 nC nC nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 6A RG = 50Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 6A TO-251 (IXTU) Outline 4.5 °C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = 6A, VGS = 0V, Note 1 1.2 V trr IF = 6A, VGS = 0V, -di/dt = 100A/μs VR = 30V IRM 30 ns 1.34 A 1. Gate 3. Source 2.Drain 4. Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 TO-252 (IXTY) Outline Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Pins: 1 - Gate 3 - Source Dim. Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTU12N06T IXTY12N06T Fig. 1. Output Characteristics @ 25ºC 12 Fig. 2. Extended Output Characteristics @ 25ºC 32 VGS = 10V 9V 8V 11 10 9 9V 24 8 7V 7 ID - Amperes ID - Amperes VGS = 10V 28 6 6V 5 4 8V 20 16 7V 12 6V 3 8 2 5V 5V 4 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 4 6 10 8 RDS(on) - Normalized ID - Amperes 14 16 18 VGS = 10V 2.0 9 7V 7 6 6V 5 4 3 1.8 I D = 12A 1.6 I D = 6A 1.4 1.2 1.0 5V 2 0.8 1 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 13 3.5 12 VGS = 10V TJ = 175ºC 15V - - - - 3.0 11 10 9 2.5 ID - Amperes RDS(on) - Normalized 12 2.2 VGS = 10V 9V 8V 11 10 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 12 8 VDS - Volts VDS - Volts 2.0 1.5 8 7 6 5 4 3 1.0 2 TJ = 25ºC 1 0 0.5 0 5 10 15 20 ID - Amperes 2008 IXYS CORPORATION All rights reserved 25 30 35 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTU12N06T IXTY12N06T Fig. 8. Transconductance Fig. 7. Input Admittance 10 6 TJ = - 40ºC 9 5 8 25ºC g f s - Siemens ID - Amperes 7 6 5 4 TJ = 150ºC 25ºC - 40ºC 3 2 4 150ºC 3 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 6 7 8 9 10 Fig. 10. Gate Charge 10 30 VDS = 30V 9 25 I D = 6A 8 I G = 10mA 7 20 VGS - Volts IS - Amperes 4 ID - Amperes 15 TJ = 150ºC 10 6 5 4 3 TJ = 25ºC 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 0.5 1.5 2 2.5 3 3.5 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10.0 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads 1 QG - NanoCoulombs VSD - Volts Coss 10 1.0 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXTU12N06T IXTY12N06T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 34 34 RG = 50Ω 32 30 30 VDS = 30V 28 t r - Nanoseconds t r - Nanoseconds 32 VGS = 10V 26 24 I 22 20 I D D = 12A = 6A RG = 50Ω 26 VGS = 10V 24 VDS = 30V 22 20 18 18 16 16 14 14 12 TJ = 25ºC 28 TJ = 125ºC 12 25 35 45 55 65 75 85 95 105 115 125 6 7 8 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 19 18 24 17 22 16 20 15 18 14 16 13 14 I D = 6A, 12A 60 70 80 90 100 110 28 19 20 I D = 12A 17 25 35 45 30 105 115 16 125 TJ = 25ºC 26 24 TJ = 125ºC 22 td(off) - - - - 20 RG = 50Ω, VGS = 10V VDS = 30V 17 10 ID - Amperes 2008 IXYS CORPORATION All rights reserved 11 12 td(off) - - - 40 TJ = 125ºC, VGS = 10V VDS = 30V t f - Nanoseconds t f - Nanoseconds 95 35 36 I D = 6A 30 32 25 28 20 24 18 15 16 10 I 50 60 70 80 D 90 = 12A 100 t d ( o f f ) - Nanoseconds 28 9 85 44 40 t d ( o f f ) - Nanoseconds 20 8 75 45 tf 7 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 32 6 55 18 TJ - Degrees Centigrade 21 tf 22 I D = 6A 18 10 120 26 24 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 18 30 I D = 12A RG - Ohms 19 32 I D = 6A 11 10 50 VDS = 30V 20 12 12 34 RG = 50Ω, VGS = 10V 21 t d ( o f f ) - Nanoseconds VDS = 30V 26 t d(off) - - - - t f - Nanoseconds TJ = 125ºC, VGS = 10V 12 36 tf 20 t d ( o n ) - Nanoseconds t r - Nanoseconds 28 11 22 21 tr 10 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 32 30 9 ID - Amperes 20 110 16 120 RG - Ohms IXYS REF: T_12N06T(U1) 4-03-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.