IXTY15P15T

IXTY15P15T IXTA15P15T IXTP15P15T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 150V - 15A  240m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 150 V VDGR TJ = 25C to 150C, RGS = 1M - 150 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 15 A IDM TC = 25C, Pulse Width Limited by TJM - 45 A IA EAS TC = 25C TC = 25C - 15 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -150 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA - 10 A - 250 A 240 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100292B(8/17) IXTY15P15T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 9 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 15 S 3650 pF 210 pF 55 pF 21 ns 14 ns 36 ns 11 ns 48 nC 17 nC 12 nC 0.83 C/W RthJC RthCS IXTA15P15T IXTP15P15T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 15 A ISM Repetitive, Pulse Width Limited by TJM - 60 A VSD IF = IS, VGS = 0V, Note 1 -1.3 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 100V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 116 638 - 11  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY15P15T IXTA15P15T IXTP15P15T o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C -55 -16 VGS = -10V - 8V - 7V -14 VGS = -10V - 9V - 8V -45 -10 I D - Amperes I D - Amperes -12 - 6V -8 -6 -4 -35 - 7V -25 - 6V -15 - 5V -2 - 5V -5 - 4V 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 -3.5 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = -7.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.4 -16 VGS = -10V - 8V - 7V -14 2.2 RDS(on) - Normalized - 6V -10 -8 - 5V -6 VGS = -10V 2.0 -12 I D - Amperes -20 VDS - Volts VDS - Volts 1.8 I D = -15A 1.6 I D = - 7.5A 1.4 1.2 1.0 -4 0.8 -2 - 4V 0.6 0 0.4 0 -1 -2 -3 -4 -5 -6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = -7.5A Value vs. Drain Current 2.6 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -18 VGS = -10V 2.4 -16 2.2 -14 o TJ = 125 C 2.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 -12 -10 -8 -6 1.4 o TJ = 25 C 1.2 -4 -2 1.0 0 0.8 0 -5 -10 -15 -20 -25 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY15P15T Fig. 8. Transconductance Fig. 7. Input Admittance -40 32 -35 28 24 o TJ = 125 C o 25 C o - 40 C -25 g f s - Siemens I D - Amperes o TJ = - 40 C -30 -20 -15 o 25 C 20 o 125 C 16 12 -10 8 -5 4 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -4 -8 -12 -16 Fig. 9. Forward Voltage Drop of Intrinsic Diode -24 -28 -32 -36 -40 40 45 50 Fig. 10. Gate Charge -45 -10 -40 -9 VDS = - 75V I D = - 7.5A -8 -35 I G = -1mA -7 VGS - Volts -30 I S - Amperes -20 I D - Amperes VGS - Volts -25 -20 -6 -5 -4 o -15 TJ = 125 C -3 -10 o TJ = 25 C -2 -5 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1.1 5 10 15 20 25 30 35 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 100 10,000 25μs RDS(on) Limit Ciss 100μs 1,000 - 10 I D - Amperes Capacitance - PicoFarads IXTA15P15T IXTP15P15T Coss 1ms 10ms -1 100 100ms DC o TJ = 150 C Crss o TC = 25 C Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 100 - 10 VDS - Volts -1,000 IXTY15P15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 18 RG = 3Ω, VGS = -10V 17 VDS = - 75V 16 t r - Nanoseconds t r - Nanoseconds RG = 3Ω, VGS = -10V 17 VDS = - 75V 16 15 I D = -15A 14 13 I D = - 7.5A o TJ = 25 C 15 14 13 12 12 11 11 10 o TJ = 125 C 10 25 35 45 55 65 75 85 95 105 115 125 -7 -8 -9 -10 40 34 VDS = - 75V tf 13 20 26 15 24 10 22 5 20 0 7 8 9 10 11 12 13 14 11 36 10 34 I D = - 7.5A, 15A 32 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf VDS = - 75V 11 36 10 34 9 8 -8 -9 -10 -11 I D - Amperes -12 -13 © 2017 IXYS CORPORATION, All Rights Reserved -14 -15 td(off) 80 o VDS = - 75V 30 t f - Nanoseconds 38 tf TJ = 125 C, VGS = -10V 70 25 60 I D = - 7.5A 20 50 15 32 10 30 5 40 I D = -15A 30 20 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds o t d(off) - Nanoseconds o 90 35 40 25 C < TJ < 125 C 30 125 40 td(off) RG = 3Ω, VGS = -10V -7 38 8 42 12 12 15 14 13 40 9 18 6 td(off) RG = 3Ω, VGS = -10V t d(off) - Nanoseconds 28 5 -15 VDS = - 75V t d(on) - Nanoseconds I D = - 7.5A, - 15A 4 -14 42 30 25 3 -13 14 32 o TJ = 125 C, VGS = -10V 30 t r - Nanoseconds td(on) t f - Nanoseconds 35 -12 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr -11 I D - Amperes TJ - Degrees Centigrade t f - Nanoseconds IXTA15P15T IXTP15P15T IXTY15P15T IXTA15P15T IXTP15P15T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_15P15T(A2-P16) 10-18-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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