IXTY18P10T
IXTA18P10T
IXTP18P10T
TrenchPTM
Power MOSFET
VDSS
ID25
RDS(on)
=
=
- 100V
- 18A
120m
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
- 100
V
VDGR
TJ = 25C to 150C, RGS = 1M
- 100
V
VGSS
Continuous
15
V
VGSM
Transient
25
V
ID25
TC = 25C
-18
A
IDM
TC = 25C, Pulse Width Limited by TJM
- 60
A
IA
EAS
TC = 25C
TC = 25C
-18
200
A
mJ
PD
TC = 25C
83
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
G
S
D (Tab)
TO-220 (IXTP)
GD
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = - 250A
-100
VGS(th)
VDS = VGS, ID = - 250A
- 2.5
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125C
VGS = -10V, ID = 0.5 • ID25, Note 1
V
- 4.5
V
Applications
50
nA
- 3 A
-100 A
120 m
© 2017 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS99966D(8/17)
IXTY18P10T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
8
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = - 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
13
S
2100
pF
185
pF
80
pF
19
ns
26
ns
44
ns
22
ns
39
nC
17
nC
9
nC
1.5 C/W
RthJC
RthCS
IXTA18P10T
IXTP18P10T
TO-220
0.50
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
-18
A
ISM
Repetitive, Pulse Width Limited by TJM
- 72
A
VSD
IF = IS, VGS = 0V, Note 1
-1.5
V
trr
QRM
IRM
IF = 0.5 • ID25, -di/dt = -100A/s
VR = - 50V, VGS = 0V
Note
1: Pulse test, t 300s, duty cycle, d 2%.
62
164
- 5.3
ns
nC
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTY18P10T
o
o
Fig. 1. Output Characteristics @ TJ = 25 C
Fig. 2. Extended Output Characteristics @ TJ = 25 C
-18
-70
VGS = -10V
- 9V
- 8V
-16
-14
VGS = -10V
-60
- 9V
-50
-12
- 7V
I D - Amperes
I D - Amperes
IXTA18P10T
IXTP18P10T
-10
- 6V
-8
-6
- 8V
-40
- 7V
-30
- 6V
-20
-4
-10
- 5V
-2
- 5V
0
0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
0
-2.0
-5
-10
-15
2.2
-18
VGS = -10V
- 9V
- 8V
- 7V
2.0
-12
- 6V
-10
-8
-6
- 5V
VGS = -10V
I D = -18A
1.6
I D = - 9A
1.4
1.2
1.0
-4
0.8
-2
0.6
0
0.4
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 9A Value vs.
Drain Current
2.4
Fig. 6. Maximum Drain Current vs. Case Temperature
-20
VGS = -10V
2.2
-18
o
TJ = 125 C
2.0
-16
-14
I D - Amperes
RDS(on) - Normalized
-30
1.8
RDS(on) - Normalized
I D - Amperes
-14
-25
Fig. 4. RDS(on) Normalized to ID = - 9A Value vs.
Junction Temperature
o
Fig. 3. Output Characteristics @ TJ = 125 C
-16
-20
VDS - Volts
VDS - Volts
1.8
1.6
1.4
o
TJ = 25 C
-12
-10
-8
-6
1.2
-4
1.0
-2
0
0.8
0
-5
-10
-15
-20
-25
-30
-35
I D - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
-40
-45
-50
-55
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTY18P10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
20
-24
IXTA18P10T
IXTP18P10T
TJ = - 40ºC
18
-20
16
o
TJ = 125 C
g f s - Siemens
I D - Amperes
25ºC
14
-16
o
25 C
o
- 40 C
-12
-8
12
125ºC
10
8
6
4
-4
2
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
0
-6.5
0
-2
-4
-6
-8
VGS - Volts
-10
-50
-9
VDS = - 50V
-8
I D = - 9A
-45
-14
-16
-18
-20
-22
-24
I G = -1mA
-7
-35
-6
VGS - Volts
I S - Amperes
-40
-30
-25
o
-5
-4
TJ = 125 C
-3
-15
o
TJ = 25 C
-10
-2
-1
-5
0
0
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
0
-1.3
5
10
15
VSD - Volts
20
25
30
35
40
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
- 100
f = 1 MHz
RDS(on) Limit
25μs
100μs
Ciss
1,000
- 10
I D - Amperes
Capacitance - PicoFarads
-12
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-55
-20
-10
I D - Amperes
Coss
100
1ms
-1
10ms
Crss
100ms
o
TJ = 150 C
o
TC = 25 C
Single Pulse
- 0.1
10
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-1
-100
- 10
VDS - Volts
-1000
IXTY18P10T
28
30
RG = 10Ω , VGS = -10V
29
RG = 10Ω , VGS = -10V
VDS = - 50V
VDS = - 50V
27
28
o
TJ = 25 C
26
25
27
t r - Nanoseconds
t r - Nanoseconds
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
29
IXTA18P10T
IXTP18P10T
I D = -18A
24
23
26
25
24
o
TJ = 125 C
22
23
I D = - 9A
21
22
20
21
25
35
45
55
65
75
85
95
105
115
-9
125
-10
-11
-12
-13
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
30
tr
28
tf
70
o
50
I D = -18A, - 9A
22
40
20
30
18
20
16
10
14
16
18
20
22
24
26
28
46
22
21
38
20
34
25
35
45
55
54
td(off)
o
TJ = 25 C
39
36
o
TJ = 125 C
20
19
-12
-13
-14
-15
I D - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
-16
-17
-18
t f - Nanoseconds
t f - Nanoseconds
42
-11
95
105
115
30
125
tf
td(off)
100
o
TJ = 125 C, VGS = -10V
90
VDS = - 50V
50
80
I D = - 9A, -18A
45
70
40
60
35
50
30
40
25
30
33
20
20
30
15
10
10
12
14
16
18
20
22
24
RG - Ohms
26
28
30
32
34
t d(off) - Nanoseconds
23
t d(off) - Nanoseconds
45
-10
85
110
60
55
48
24
-9
75
65
51
VDS = - 50V
21
65
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
RG = 10Ω, VGS = -10V
22
42
I D = -18A, - 9A
TJ - Degrees Centigrade
tf
25
50
23
30
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
26
54
VDS = - 50V
RG - Ohms
27
-18
td(off)
19
0
14
-17
RG = 10Ω, VGS = -10V
24
t f - Nanoseconds
24
12
-16
t d(off) - Nanoseconds
t r - Nanoseconds
60
t d(on) - Nanoseconds
VDS = - 50V
10
-15
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
25
80
td(on)
TJ = 125 C, VGS = -10V
26
-14
I D - Amperes
TJ - Degrees Centigrade
IXTY18P10T
IXTA18P10T
IXTP18P10T
Fig. 19. Maximum Transient Thermal Impedance
10
Z (th)JC - K / W
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
TO-252 AA Outline
A
A
E
b3
4
L3
TO-263 Outline
E
c2
C2
TO-220 Outline
A
E1
L1
A1
L4
1
2
A2
3
L1
e
e1
e1
b2
L
L2
c
0
5.55MIN
OPTIONAL
1
1 - Gate
2,4 - Drain
3 - Source
2
L2
3
b2
A1
6.40
A1
H1
Q
D2
D
b
L3
c
e
0.43 [11.0]
D1
e
E1
0
2.85MIN
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
0.20 [5.0]
0.10 [2.5]
A2
EJECTOR
PIN
0.66 [16.6]
A2
1 - Gate
2,4 - Drain
3 - Source
4
BOTTOM
VIEW
4
H
0.34 [8.7]
6.50MIN
A
oP
D1
D
H
E
L1
L
0.12 [3.0]
0.06 [1.6]
e
c
e1
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_18P10T(A1-810) 11-05-10-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.