IXTY1R6N50P

IXTY1R6N50P IXTP1R6N50P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 1.6A   6.5 TO-252 (IXTY) G TE S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 VDGR TJ = 25C to 150C, RGS = 1M 500 V V VGSS Continuous 30 VGSM Transient 40 ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 1.6 2.5 A A IA TC = 25C 1.6 A EAS TC = 25C 75 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C TL TSOLD FC Md LE O Mounting Force (TO-263) Mounting Torque (TO-220) W  C 150  C  C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 3.00 g g TO-252 TO-220 O Weight V -55 ... +150 BS TJM Tstg V 43 -55 ... +150 TJ G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages    High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 25A 3.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 5.5 V             50 nA 1 A TJ = 125C RDS(on) TO-220AB (IXTP) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 © 2017 IXYS CORPORATION, All Rights Reserved 50  A 6.5  DS99444F(6/17) IXTY1R6N50P IXTP1R6N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 0.7 TO-252 AA Outline A A E b3 4 1.3 S 140 pF c2 L3 A1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 20 2.6 pF td(on) 20 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 26 ns 45 ns RG = 50(External) 23 ns 3.9 nC tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 1.4 Qgd 1.3 L1 L b2 e e1 e1 H 1 - Gate 2,4 - Drain 3 - Source c L2 0 5.55MIN OPTIONAL 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION nC nC 2.9 C/W RthJC TO-220 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS = 0V ISM C/W Characteristic Values Min. Typ. Max. 1.6 A Repetitive, Pulse Width Limited by TJM 5.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.6A, VGS = 0V,-di/dt = 100A/s VR = 100V O IS  LE RthCS A2 3 6.50MIN Qg(on) Qgs 2 TE td(off) Resistive Switching Times 1 pF Crss tr L4       ns     BS 400 TO-220 Outline     Notes: 1. Pulse test, t  300s, duty cycle, d  2%.  2. On through-hole package, RDS(on) Kelvin test contact location must be 5mm or less from the package body.      O 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R6N50P IXTP1R6N50P Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 1.6 2.8 VGS = 10V 8V 1.4 VGS = 10V 8V 2.4 7V 2.0 1.0 0.8 I D - Amperes I D - Amperes 1.2 6V 0.6 1.6 1.2 6V 0.8 0.2 TE 0.4 0.4 5V 5V 0.0 0.0 0 2 4 6 8 10 12 0 VDS - Volts 1.4 20 25 30 RDS(on) - Normalized 6V 1.0 O 0.8 VGS = 10V 2.8 7V 1.2 2.4 I D = 1.6A 2.0 1.6 I D = 0.8A 1.2 5V 0.0 0 BS 0.2 2 4 6 8 10 12 14 16 18 20 22 0.8 0.4 -50 24 -25 0 VDS - Volts 100 125 150 1.6 1.4 o O 75 Fig. 6. Maximum Drain Current vs. Case Temperature TJ = 125 C I D - Amperes 1.2 2.0 1.5 50 1.8 VGS = 10V 2.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current 3.0 RDS(on) - Normalized 15 LE VGS = 10V 0.4 10 Fig. 4. RDS(on) Normalized to ID = 0.8A Value vs. Junction Temperature 3.2 1.6 0.6 5 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC I D - Amperes 7V o TJ = 25 C 1.0 0.8 0.6 0.4 1.0 0.2 0.0 0.5 0.0 0.4 0.8 1.2 1.6 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 2.0 2.4 2.8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY1R6N50P IXTP1R6N50P Fig. 9. Transconductance Fig. 8. Input Admittance 2.4 2.0 1.8 1.8 g f s - Siemens 1.4 1.2 1.0 0.8 o TJ = 125 C o o 25 C 0.6 - 40 C o 25 C 1.6 1.4 o 125 C 1.2 1.0 0.8 0.6 TE I D - Amperes TJ = - 40 C VDS = 10V 2.0 1.6 0.4 0.4 0.2 0.2 0.0 0.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 I D - Amperes VGS - Volts Fig. 11. Gate Charge Fig. 10. Forward Voltage Drop of Intrinsic Diode LE 10 5.0 9 4.5 VDS = 250V I D = 0.8A 8 4.0 I G = 10mA 7 3.5 6 VGS - Volts 3.0 2.5 5 O I S - Amperes o 2.2 VDS = 10V 2.0 o 4 TJ = 125 C 1.5 3 o TJ = 25 C 1.0 0.0 0.4 BS 0.5 0.5 0.6 0.7 0.8 0.9 2 1 0 1.0 0 0.5 1 VSD - Volts Fig. 12. Capacitance 1,000 1.5 2 2.5 3 3.5 4 QG - NanoCoulombs Fig. 14. Forward-Bias Safe Operating Area 10 f = 1 MHz RDS(on) Limit 100 I D - Amperes Capacitance - PicoFarads O C iss Coss 1 25μs 100μs 10 o TJ = 150 C C rss DC TC = 25 C Single Pulse 1 1ms 10ms o 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTY1R6N50P IXTP1R6N50P Fig. 13. Maximum Transient Thermal Impedance 1 0.1 0.00001 0.0001 0.001 0.01 TE Z (th)JC - K / W 10 0.1 1 10 O BS O LE Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_1R6N50P (11) 6-19-17-B