IXTY48P05T
IXTA48P05T
IXTP48P05T
TrenchPTM
Power MOSFET
VDSS
ID25
RDS(on)
=
=
- 50V
- 48A
30m
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
- 50
V
VDGR
TJ = 25C to 150C, RGS = 1M
- 50
V
VGSS
Continuous
15
V
VGSM
Transient
25
V
ID25
TC = 25C
- 48
A
IDM
TC = 25C, Pulse Width Limited by TJM
-150
A
IA
EAS
TC = 25C
TC = 25C
- 48
300
A
mJ
PD
TC = 25C
150
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
G
S
D (Tab)
TO-220 (IXTP)
GD
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = - 250A
- 50
VGS(th)
VDS = VGS, ID = - 250A
- 2.0
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125C
VGS = -10V, ID = 0.5 • ID25, Note 1
V
- 4.5
V
Applications
50
nA
- 10 A
- 250 A
30 m
© 2017 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS100293C(8/17)
IXTY48P05T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
16
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = - 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = - 30V, ID = 0.5 • ID25
RG = 3 (External)
Qg(on)
Qgs
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
26
S
3660
pF
495
pF
215
pF
20
ns
15
ns
30
ns
13
ns
53
nC
16
nC
21
nC
0.83 C/W
RthJC
RthCS
IXTA48P05T
IXTP48P05T
TO-220
0.50
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
- 48
A
ISM
Repetitive, Pulse Width Limited by TJM
-192
A
VSD
IF = IS, VGS = 0V, Note 1
-1.5
V
trr
QRM
IRM
IF = 0.5 • ID25, -di/dt = -100A/s
VR = - 25V, VGS = 0V
Note
1: Pulse test, t 300s, duty cycle, d 2%.
30
43.4
- 2.8
ns
nC
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTY48P05T
o
o
Fig. 1. Output Characteristics @ TJ = 25 C
Fig. 2. Extended Output Characteristics @ TJ = 25 C
-48
-180
VGS = -10V
VGS = -10V
- 9V
-160
-40
- 8V
-32
-120
- 7V
-24
- 6V
-16
- 9V
-140
I D - Amperes
I D - Amperes
IXTA48P05T
IXTP48P05T
- 8V
-100
- 7V
-80
-60
- 6V
-40
-8
- 5V
- 5V
-20
- 4V
- 4V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
0
-1.6
-5
-10
-15
-25
-30
Fig. 4. RDS(on) Normalized to ID = - 24A Value vs.
Junction Temperature
o
Fig. 3. Output Characteristics @ TJ = 125 C
1.6
-48
VGS = -10V
- 9V
VGS = -10V
1.5
-40
- 8V
-32
1.4
RDS(on) - Normalized
I D - Amperes
-20
VDS - Volts
VDS - Volts
- 7V
-24
- 6V
-16
- 5V
I D = - 48A
1.3
1.2
I D = - 24A
1.1
1.0
0.9
-8
0.8
- 4V
0
0.7
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-50
-25
0
Fig. 5. RDS(on) Normalized to ID = - 24A Value vs.
Drain Current
1.9
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 6. Maximum Drain Current vs. Case Temperature
-55
VGS = -10V
-45
o
TJ = 125 C
I D - Amperes
RDS(on) - Normalized
1.7
1.5
1.3
-35
-25
-15
o
TJ = 25 C
1.1
-5
0.9
0
-20
-40
-60
-80
I D - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
-100
-120
-140
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTY48P05T
Fig. 7. Input Admittance
IXTA48P05T
IXTP48P05T
Fig. 8. Transconductance
40
-60
o
-50
30
o
TJ = 125 C
-40
o
25 C
o
- 40 C
g f s - Siemens
I D - Amperes
TJ = - 40 C
35
-30
-20
o
25 C
25
o
125 C
20
15
10
-10
5
0
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
-10
-20
-30
-40
-50
-60
-70
I D - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-160
-10
VDS = - 27.5V
I D = - 24A
I G = -1mA
-9
-140
-8
-120
VGS - Volts
I S - Amperes
-7
-100
-80
-60
o
TJ = 125 C
-6
-5
-4
-3
-40
o
-2
TJ = 25 C
-20
-1
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
0
-1.8
5
10
15
20
25
30
35
40
45
50
55
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
- 1,000
10,000
RDS(on) Limit
Ciss
- 100
I D - Amperes
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
25μs
100μs
1ms
- 10
10ms
o
TJ = 150 C
100ms
o
TC = 25 C
Single Pulse
Crss
DC
-1
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-1
- 10
VDS - Volts
- 100
IXTY48P05T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
15.5
IXTA48P05T
IXTP48P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
16.0
RG = 3Ω, VGS = -10V
RG = 3Ω, VGS = -10V
VDS = - 30V
VDS = - 30V
15.5
t r - Nanoseconds
t r - Nanoseconds
15.0
I D = - 48A
14.5
I D = - 24A
15.0
o
TJ = 25 C
14.5
14.0
o
TJ = 125 C
14.0
13.5
13.0
13.5
25
35
45
55
65
75
85
95
105
115
-24
125
-28
-32
-36
tr
24
18
27
td(on)
26
o
16
22
14
21
12
20
10
19
8
t f - Nanoseconds
t r - Nanoseconds
23
I D = - 24A, - 48A
4
5
6
7
8
9
10
11
12
13
14
34
15
32
14
13
28
12
26
25
15
55
65
75
85
95
105
115
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
tf
41
35
38
30
td(off)
tf
RG = 3Ω, VGS = -10V
t f - Nanoseconds
13
29
12
26
10
23
5
11
I D - Amperes
-40
© 2017 IXYS CORPORATION, All Rights Reserved
-44
-48
50
I D = - 24A
20
32
-36
60
25
14
-32
td(off)
o
40
15
30
I D = - 48A
20
10
3
4
5
6
7
8
9
10
RG - Ohms
11
12
13
14
15
t d(off) - Nanoseconds
35
o
TJ = 25 C, 125 C
-28
70
VDS = - 30V
t d(off) - Nanoseconds
o
24
125
TJ = 125 C, VGS = -10V
VDS = - 30V
t f - Nanoseconds
45
TJ - Degrees Centigrade
16
-24
35
RG - Ohms
17
15
30
I D = - 48A, - 24A
11
18
3
16
t d(off) - Nanoseconds
24
36
VDS = - 30V
t d(on) - Nanoseconds
20
td(off)
RG = 3Ω, VGS = -10V
25
VDS = - 30V
18
-48
38
tf
17
TJ = 125 C, VGS = -10V
22
-44
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
26
-40
I D - Amperes
TJ - Degrees Centigrade
IXTY48P05T
IXTA48P05T
IXTP48P05T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - K / W
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
TO-252 AA Outline
A
A
E
b3
4
L3
TO-263 Outline
E
c2
C2
TO-220 Outline
A
E1
L1
A1
L4
1
2
A2
3
L1
e
e1
e1
b2
L
L2
c
0
5.55MIN
OPTIONAL
1
1 - Gate
2,4 - Drain
3 - Source
2
L2
3
b2
A1
6.40
A1
H1
Q
D2
D
b
L3
c
e
0.43 [11.0]
D1
e
E1
0
2.85MIN
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
0.20 [5.0]
0.10 [2.5]
A2
EJECTOR
PIN
0.66 [16.6]
A2
1 - Gate
2,4 - Drain
3 - Source
4
BOTTOM
VIEW
4
H
0.34 [8.7]
6.50MIN
A
oP
D1
D
H
E
L1
L
0.12 [3.0]
0.06 [1.6]
e
c
e1
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_48P05T(A2-P05) 10-18-10
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.