IXTY4N65X2

IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 4A  850m  N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 4 A IDM TC = 25C, Pulse Width Limited by TJM 8 A IA TC = 25C 2 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 80 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V 100 nA TJ = 125C  5 A 100 A Applications   850 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100648D(6/18) IXTY4N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 2.5 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 4.2 S 13  455 pF 294 pF 0.8 pF 32 82 pF pF 22 ns 28 ns 57 ns 25 ns 8.3 nC 2.0 nC 3.0 nC IXTA4N65X2 IXTP4N65X2 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1.56 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 4 A Repetitive, pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 2A, -di/dt = 100A/μs 160 890 11.4 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY4N65X2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 4.0 10 VGS = 10V 7V 3.5 VGS = 10V 8V 9 8 3.0 7 6V 2.5 I D - Amperes I D - Amperes IXTA4N65X2 IXTP4N65X2 2.0 5.5V 1.5 7V 6 5 6V 4 3 1.0 2 5V 0.5 1 0.0 5V 0 0 0.5 1 1.5 2 2.5 3 0 3.5 4 8 12 VDS - Volts 3.5 4.0 VGS = 10V 8V 24 28 32 VGS = 10V 3.0 RDS(on) - Normalized 7V 3.0 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.5 16 VDS - Volts 2.5 2.0 6V 1.5 1.0 2.5 I D = 4A 2.0 I D = 2A 1.5 1.0 0.5 0.5 5V 0.0 0.0 0 1 2 3 4 5 6 7 8 -50 9 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 4.5 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 4.0 3.5 o TJ = 125 C 3.5 3.0 3.0 I D - Amperes RDS(on) - Normalized 50 4.5 VGS = 10V 4.0 25 TJ - Degrees Centigrade 2.5 o TJ = 25 C 2.0 1.5 2.5 2.0 1.5 1.0 1.0 0.5 0.0 0.5 0 1 2 3 4 5 6 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 7 8 9 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY4N65X2 Fig. 7. Input Admittance IXTA4N65X2 IXTP4N65X2 Fig. 8. Transconductance 7 8 6 7 o TJ = - 40 C 6 o g f s - Siemens I D - Amperes 5 4 o TJ = 125 C o 25 C o - 40 C 3 2 25 C 5 o 4 125 C 3 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts 4 5 6 7 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 14 VDS = 325V 12 I D = 2A 8 I G = 10mA VGS - Volts I S - Amperes 10 8 6 o 6 4 TJ = 125 C 4 o TJ = 25 C 2 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 7 8 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 10000 7 Ciss EOSS - MicroJoules Capacitance - PicoFarads 6 1000 100 Coss 10 5 4 3 2 1 1 Crss f = 1 MHz 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 9 IXTY4N65X2 Fig. 13. Forward-Bias Safe Operating Area IXTA4N65X2 IXTP4N65X2 Fig. 14. Maximum Transient Thermal Impedance 10 10 25μs RDS(on) Limit 1 Z (th)JC - K / W I D - Amperes 1 100μs 1ms 0.1 0.1 10ms o TJ = 150 C o TC = 25 C Single Pulse DC 0.01 10 100 0.01 0.00001 1,000 0.0001 VDS - Volts 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-220 Outline E TO-263 Outline TO-252 AA Outline A A E b3 4 L3 E C2 c2 A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 c 0 5.55MIN 2 3 1 - Gate 2,4 - Drain 3 - Source D2 4 H D1 4 6.40 2.85MIN b L3 c e 0.43 [11.0] A2 EJECTOR e PIN L1 0 L 0.34 [8.7] 0.66 [16.6] A2 6.50MIN BOTTOM VIEW A1 H1 Q E1 b2 L L2 OPTIONAL 1 H L2 A1 D D1 D A oP e 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source 2.28 1.25MIN LAND PATTERN RECOMMENDATION © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N65X2(X1-R2T5) 6-05-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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