IXTY55N075T

Preliminary Technical Information IXTP55N075T IXTY55N075T TrenchMVTM Power MOSFET VDSS ID25 = = RDS(on) N-Channel Enhancement Mode Avalanche Rated 75 V 55 A Ω ≤ 19.5 mΩ TO-220 (IXTP) D (TAB) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM Maximum Ratings 75 75 V V Transient ± 20 V ID25 IL IDM TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM 55 25 150 A A A IAR EAS TC = 25°C TC = 25°C 10 250 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ ≤ 175°C, RG =18 Ω PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-252 1.13 / 10 Nm/lb.in. 3 0.35 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 25 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) D S TJ = 150°C VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 V 4.0 V ± 100 nA 1 100 μA μA 19.5 mΩ TO-252 (IXTY) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99631 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTP55N075T IXTY55N075T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, Note 1 16 Ciss Coss TO-220 (IXTP) Outline 27 S 1400 pF 235 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 123 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 50 ns td(off) RG = 18 Ω (External) 44 ns tf 41 ns Qg(on) 33 nC Pins: Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd 10 nC 9 nC 2 - Drain 4, TAB - Drain 1.15 °C/W RthJC RthCS 1 - Gate 3 - Source TO-220 °C/W 0.5 Source-Drain Diode Symbol Test Conditions Values TJ = 25°C unless otherwise specified) Characteristic Min. IS VGS = 0 V ISM Repetitive VSD IF = 25 A, VGS = 0 V, Note 1 t rr IF = 25 A, -di/dt = 100 A/μs Typ. Max. 55 A 150 A 1.2 V 50 ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-252 (IXTY) Outline Dim. 1 Anode 2 NC 3 Anode 4 Cathode A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.090 0.180 0.370 0.020 0.025 0.035 0.100 PRELIMINARYTECHNICAL INFORMATION 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 BSC BSC 0.410 0.040 0.040 0.050 0.115 The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTP55N075T IXTY55N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 55 V GS = 10V VGS = 10V 9V 8V 50 45 140 9V 120 ID - Amperes ID - Amperes 40 35 30 7V 25 20 6V 15 10 5V 5 0 8V 100 80 7V 60 40 6V 20 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 2 4 6 8 VDS - Volts 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 27.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.8 55 VGS = 10V 9V 8V 45 2.6 40 35 30 7V 25 6V 20 VGS = 10V 2.4 RDS(on) - Normalized 50 ID - Amperes 10 VDS - Volts 2.2 2 I D = 55A 1.8 1.6 I D = 27.5A 1.4 1.2 15 10 1 5V 5 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 2.4 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 27.5A Value vs. Drain Current 50 75 100 125 150 175 150 175 Fig. 6. Maximum Drain Current vs. Case Temperature 4.2 60 55 VGS = 10V 15V - - - - 3.8 TJ = 175ºC 50 3.4 45 3 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.6 2.2 1.8 40 35 30 25 20 15 1.4 10 1 TJ = 25ºC 5 0.6 0 0 20 40 60 80 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTP55N075T IXTY55N075T Fig. 8. Transconductance Fig. 7. Input Admittance 90 40 TJ = - 40ºC 80 35 TJ = - 40ºC 25ºC 150ºC 30 60 g f s - Siemens ID - Amperes 70 50 40 30 25ºC 25 20 125ºC 15 10 20 5 10 0 0 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 90 Fig. 10. Gate Charge 140 10 VDS = 37.5V 9 120 I D = 10A 8 100 I G = 1mA 7 VGS - Volts IS - Amperes 40 I D - Amperes 80 60 TJ = 150ºC 40 6 5 4 3 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 5 VSD - Volts 10 15 20 25 30 35 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10.00 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C iss 1,000 C oss 1.00 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTP 55N075T IXTY 55N075T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 85 80 RG = 18Ω 80 RG = 18Ω 75 VGS = 10V 75 VGS = 10V 70 VDS = 37.5V 70 VDS = 37.5V t r - Nanoseconds t r - Nanoseconds 85 65 60 55 I D = 30A 50 45 TJ = 25ºC 65 60 55 50 45 40 40 35 35 I D = 10A 30 TJ = 125ºC 30 25 25 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 TJ - Degrees Centigrade 150 TJ = 125ºC, V GS = 10V 29 25 I D = 10A 70 23 50 21 30 19 30 30 35 40 45 50 55 V DS = 37.5V 38 42 34 38 32 34 30 25 60 35 tf 40 RG = 18Ω, VGS = 10V V DS = 37.5V 75 85 95 105 115 30 125 130 90 120 50 85 110 48 80 100 46 37 44 36 42 TJ = 125ºC 35 40 34 38 33 36 32 31 TJ = 25ºC 30 22 24 26 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 28 30 75 90 I D = 10A 70 80 65 70 60 60 I D = 30A 55 50 50 40 45 tf td(off) - - - - 30 34 40 TJ = 125ºC, VGS = 10V 20 32 35 V DS = 37.5V 10 30 30 t d ( o f f ) - Nanoseconds 95 52 t d ( o f f ) - Nanoseconds 38 20 65 54 t f - Nanoseconds td(off) - - - - 41 18 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 42 16 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 14 46 36 RG - Ohms 39 50 I D = 10A I D = 30A 17 25 td(off) - - - - tf RG = 18Ω, V GS = 10V t f - Nanoseconds t r - Nanoseconds 90 10 t f - Nanoseconds 28 t d ( o f f ) - Nanoseconds 27 I D = 30A t d ( o n ) - Nanoseconds 110 12 26 54 40 VDS = 37.5V 10 24 42 31 20 22 td(on) - - - - tr 15 20 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 130 18 I D - Amperes 0 15 20 25 30 35 40 45 50 55 60 RG - Ohms IXYS REF: T_55N075T (1V) 7-13-06.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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